Indium nitride emerges

Abstract

Because of its high mobility, indium nitride is emerging as a “hot” material for potential application in nitride based high power, high frequency transistor devices. The best quality indium nitride ever grown was produced at Macquarie University in the early 1980’s by RF sputtering. The belief since that time has been that the background n-type carrier concentration of this sputtered material is due to nitrogen vacancies. Using measurements made by Elastic Recoil Detection analysis, with an incident beam of 200 MeV Au ions, it is shown that this material is actually grown nitrogen rich with the nitrogen on indium anti-site defect being the most probable origin of the high n-type conductivity commonly observed. Raman measurements confirm the revised model.3 page(s