Barrier RF Stacking

A novel wideband RF system, nicknamed the barrier RF, has been designed, fabricated and installed in the Fermilab Main Injector. The cavity is made of seven Finemet cores, and the modulator made of two bipolar high-voltage fast solid-state switches. The system can deliver ±7 kV square pulses at 90 kHz. The main application is to stack two proton batches injected from the Booster and squeeze them into the size of one so that the bunch intensity can be doubled. High intensity beams have been successfully stacked and accelerated to 120 GeV with small losses. The problem of large longitudinal emittance growth is the focus of the present study. An upgraded system with two barrier RF cavities for continuous stacking is under construction. This work is part of the US-Japan collaborative agreement

Mott Gap Excitations and Resonant Inelastic X-Ray Scattering in Doped Cuprates

Predictions are made for the momentum- and carrier-dependent degradation of the Mott gap upon doping in high-Tc cuprates as would be observed in Cu K-edge resonant inelastic x-ray scattering (RIXS). The two-dimensional Hubbard model with second- and third-nearest-neighbor hopping terms has been studied by numerical exact diagonalization. Special emphasis is placed on the particle-hole asymmetry of the Mott gap excitations. We argue that the Mott gap excitations observed by RIXS are significantly influenced by the interaction between charge carriers and antiferromagnetic correlations.Comment: 4 pages, 4 figures, revised version; to be published in Phys. Rev. Let

Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV

Negative Differential Resistance Induced by Mn Substitution at SrRuO3/Nb:SrTiO3 Schottky Interfaces

We observed a strong modulation in the current-voltage characteristics of SrRuO$_3$/Nb:SrTiO$_3$ Schottky junctions by Mn substitution in SrRuO$_3$, which induces a metal-insulator transition in bulk. The temperature dependence of the junction ideality factor indicates an increased spatial inhomogeneity of the interface potential with substitution. Furthermore, negative differential resistance was observed at low temperatures, indicating the formation of a resonant state by Mn substitution. By spatially varying the position of the Mn dopants across the interface with single unit cell control, we can isolate the origin of this resonant state to the interface SrRuO$_3$ layer. These results demonstrate a conceptually different approach to controlling interface states by utilizing the highly sensitive response of conducting perovskites to impurities