Multiscale expansion of the lattice potential KdV equation on functions of infinite slow-varyness order

We present a discrete multiscale expansion of the lattice potential Korteweg-de Vries (lpKdV) equation on functions of infinite order of slow-varyness. To do so we introduce a formal expansion of the shift operator on many lattices holding at all orders. The lowest secularity condition from the expansion of the lpKdV equation gives a nonlinear lattice equation, depending on shifts of all orders, of the form of the nonlinear Schr\"odinger (NLS) equationComment: 9 pages, submitted to Journ. Phys.

Phonon, Two-Magnon and Electronic Raman Scattering of Fe1+yTe1-xSex

We have measured Raman scattering spectra of single-crystalline FeTe0.6Se0.4 (T_c ~ 14.5 K) and its parent compound Fe1.074Te at various temperatures. In the parent compound Fe1.074Te, A1g and B1g modes have been observed at 157.5 and 202.3 cm-1, respectively, at 5 K. These frequencies qualitatively agree with the calculated results. Two-magnon excitation has been observed around 2300 cm-1 for both compounds. Temperature dependence between the electronic Raman spectra below and above T_c has been observed and 2\Delta and 2\Delta/k_BT_C have been estimated as 5.0 meV and 4.0, respectively.Comment: 8 pages, 8 figures, to be published in Phys. Rev.

Barrier RF Stacking

A novel wideband RF system, nicknamed the barrier RF, has been designed, fabricated and installed in the Fermilab Main Injector. The cavity is made of seven Finemet cores, and the modulator made of two bipolar high-voltage fast solid-state switches. The system can deliver ±7 kV square pulses at 90 kHz. The main application is to stack two proton batches injected from the Booster and squeeze them into the size of one so that the bunch intensity can be doubled. High intensity beams have been successfully stacked and accelerated to 120 GeV with small losses. The problem of large longitudinal emittance growth is the focus of the present study. An upgraded system with two barrier RF cavities for continuous stacking is under construction. This work is part of the US-Japan collaborative agreement

Field Effect Transistor Based on KTaO3 Perovskite

An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4 and a field effect mobility of 0.4cm^2/Vs at room temperature, both of which are much better than those of the SrTiO3 FETs reported previously. The field effect mobility was almost temperature independent down to 200K. Our results indicate that the Al2O3 / KTaO3 interface is worthy of further investigations as an alternative system of future oxide electronics.Comment: 3 pages, 3 Postscript figures, submitted to Appl.Phys.Let

Low temperature metallic state induced by electrostatic carrier doping of SrTiO3_3

Transport properties of SrTiO$_3$-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below $R_{\Box}$ $\sim$ 10 k$\Omega$ at low temperatures, with carrier mobility exceeding 1000 cm$^2$/Vs. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior ($dR$/$dT$ $>$ 0). Our results demonstrate an insulator to metal transition in SrTiO$_3$ driven by electrostatic carrier density control.Comment: 3 pages, 4 figure