Propriétés structurales, électroniques et optiques des couches minces de diamant dopées n

GRENOBLE1-BU Sciences (384212103) / SudocSudocFranceF

Photonics for safety and security

This volume aims to illustrate the state-of-the-art as well as the newest and latest applications of photonics in safety and security. The contributions from renowned and experienced Italian and international scientists, both from the academic and industrial community, present a multidisciplinary and comprehensive overview of this popular topic. The volume is self-contained and offers a broad survey of the various emerging technologies, as well as their applications in the real world. It spans from applications in cultural heritage, to environment, space, monitoring of coasts, quantum cryptog

An introduction to optoelectronic sensors

This invaluable book offers a comprehensive overview of the technologies and applications of optoelectronic sensors. Based on the R&D experience of more than 70 engineers and scientists, highly representative of the Italian academic and industrial community in this area, this book provides a broad and accurate description of the state-of-the-art optoelectronic technologies for sensing. The most innovative approaches, such as the use of photonic crystals, squeezed states of light and microresonators for sensing, are considered. Application areas range from environment to medicine and healthcar

The Real Estate Risk Assessment: An Innovative Methodology for Supporting Public and Private Subjects Involved into Sustainable Urban Interventions

Projects carried out under Public-Private Partnership (PPP) forms are increasingly being used for construction, new infrastructure implementation, urban redevelopment operations and more general land interventions. PPP projects, due to their complexity, are characterized by risks that undermine their success, for this reason risk assessment models for PPP projects are essential to their successful implementation. In this context, the research proposes an innovative real estate risk assessment methodology for supporting the Public Administration and the Private Entrepreneur involved into PPP projects. The research proposes an ex-ante real estate risk assessment methodology, based on the multicriteria Analytic Hierarchy Process (AHP) technique that can be used at different territorial scales and by both public and private parties involved in urban transformations projects. The construction of the risk index is obtained through the logical-operative framework that consists into a protocol of 7 ordered and sequential phases. The methodology turns out to be flexible and reproducible and allows for parallel analysis of qualitative and quantitative aspects that in terms of risk undermine the success of projects

Il processo di valutazione degli Istituti del Consiglio Nazionale delle Ricerche

Il presente report “Il processo di valutazione degli Istituti del Consiglio Nazionale delle Ricerche” analizza il processo di valutazione degli Istituti del CNR, svoltosi a cavallo tra il 2007 ed il 2010, ponendo l’attenzione sulle modalità di svolgimento di tutte le fasi, sulle componenti attoriali coinvolte nella procedura ad ogni livello e sugli strumenti da loro utilizzati. La suddetta valutazione ha tenuto conto delle attività scientifiche, gestionali ed amministrative svolte dalla rete scientifica del CNR e riguardanti il quinquennio di riferimento 2003-2007

Strains and cracks in undoped and phosphorus-doped {111} homoepitaxial diamond films

International audienceUndoped and phosphorus-doped diamond thin films grown by Microwave Plasma-enhanced Chemical Vapour Deposition (MPCVD) on Ib {111}-oriented diamond substrates have been studied by confocal micro-Raman spectroscopy and confocal Raman imaging. A distinct Raman peak, broader and 6 cm-1 lower than the zone-centre optical phonon line of the substrate, was nearly systematically detected showing that in most cases the homoepitaxial layers were under an intense tensile strain. The magnitude of this strain increased with deposited thickness. In the thicker films, it was further observed that a network of oriented cracks could relieve the internal stress. These results suggest that tensile strain is a general feature of defective {111}-oriented CVD diamond homoepitaxial layers

Internal stresses in {111} homoepitaxial CVD diamond

International audienceUndoped and phosphorus-doped diamond thin films grown by microwave plasma-enhanced chemical vapour deposition (MPCVD) on Ib {111}-oriented diamond substrates have been studied by confocal micro-Raman spectroscopy. Thanks to the confocal optics, the Raman signal arising from the epilayer could be discriminated from that arising from the substrate. In this study, a distinct Raman peak, broader and approximately 6 cm−1 lower than the optical phonon line of the substrate, was systematically detected and showed that the homoepitaxial layers were under an intense tensile stress. The magnitude of this stress increased with deposited thickness up to a few GPa. In the thicker films, a high compressive stress was also detected at the substrate near surface. Finally, it was observed that a network of oriented cracks could relieve the internal stress

Micro-Raman scattering from undoped and phosphorus-doped (111) homoepitaxial diamond films: Stress imaging of cracks

International audienceWe report postgrowth micro-Raman stress imaging of cracks in (111) homoepitaxial diamond films. Undoped and phosphorous-doped diamond thin films grown by microwave plasma-enhanced chemical-vapor deposition on Ib (111)-oriented diamond substrates have been studied by confocal micro-Raman spectroscopy. For comparison purposes, a film grown on a (100) Ib substrate was also examined. Thanks to the confocal optics, the Raman signal arising from the epilayer could be discriminated from that arising from the substrate. As was already reported, the (111) films exhibited substantial tensile stress, indicated by a downshift in the Raman peak and by spontaneous cracking in films grown thicker than 5 µm. The sixfold symmetry of the cracks supported that the films were homoepitaxial. A high compressive stress was also detected at the substrate near surface, and a partial stress relaxation was observed to occur in the vicinity of the cracks. Possible origins of the high tensile stress observed in the (111) homoepitaxial diamond films are discussed

A Novel Micro-Structured Reference Material for Microbeam Analysis.

Abstract not availableJRC.D-Institute for Reference Materials and Measurements (Geel

Characterization of ‹111› diamond thin films by micro-Raman spectroscopy

International audienceHigh-resolution confocal micro-Raman spectra show that for homoepitaxial growth on ‹111›-oriented surfaces the zone-center phonon peak of the epilayers may occur a few cm-1 below the peak of the relaxed diamond. This indicates a strong tensile strain in the films, while close to the interface the substrate is under compression. This effect was observed in both phosphorus-doped and undoped epilayers, as well as on some facets of a polycrystalline sample. Results obtained on ‹111›-oriented films grown by microwave plasma chemical vapor deposition in three different laboratories are compared, providing some hints as to how such undesirable strain effects can be avoided