Fabrication and Sub-Band-Gap Absorption of Single-Crystal Si Supersaturated with Se by Pulsed Laser Mixing

Selenium supersaturated silicon layers were fabricated by pulsed excimer laser induced liquid-phase mixing of thin Se films on Si(001) wafers. Sufficiently low Se coverage avoids destabilization of rapid epitaxial solidification, resulting in supersaturated solid solutions free of extended defects, as shown by transmission electron microscopy. The amount of retained Se depends on the original film thickness, the laser fluence, and the number of laser pulses irradiating the same spot on the surface. Using this method, Se has incorporated into the topmost 300 nm of the silicon with a concentration of 0.1 at.%. Channeling Rutherford backscattering spectrometry measurements show that the substitutional fraction can be as high as 75% of the total retained Se. These alloys exhibit strong sub-band-gap absorption with optical absorption coefficient ranging up to about 104 cm−1, thus making them potential candidates for applications in Si-based optoelectronic devices.Physic

Laser-chemical vapor deposition of W Schottky contacts on GaAs\ud using WF6 and SiH4

Reports on the deposition of tungsten on gallium arsenide (GaAs) using a low-temperature laser-chemical vapor deposition process. Induction of metallic W formation from a gas mixture; Columnar structure shown by scanning electron microscopy of the W films; Schottky diodes obtained during a laser based resistless projection patterning process on GaAs

Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting

Topographically flat, single crystal silicon supersaturated with the chalcogens S, Se, and Te was prepared by ion implantation followed by pulsed laser melting and rapid solidification. The influences of the number of laser shots on the atomic and carrier concentration-depth profiles were measured with secondary ion mass spectrometry and spreading resistance profiling, respectively. We found good agreement between the atomic concentration-depth profiles obtained from experiments and a one-dimensional model for plane-front melting, solidification, liquid-phase diffusion, with kinetic solute trapping, and surface evaporation. Broadband subband gap absorption is exhibited by all dopants over a wavelength range from 1 to 2.5 microns. The absorption did not change appreciably with increasing number of laser shots, despite a measurable loss of chalcogen and of electronic carriers after each shot.One of the authors M.T. acknowledges the financial support of the Fulbright Program. This research was supported in part by the U.S. Army ARDEC under Contract No. W15QKN-07- P-0092

Emergence of Very Broad Infrared Absorption Band by Hyperdoping of Silicon with Chalcogens

We report the near through mid-infrared (MIR) optical absorption spectra, over the range 0.05–1.3 eV, of monocrystalline silicon layers hyperdoped with chalcogen atoms synthesized by ion implantation followed by pulsed laser melting. A broad mid-infrared optical absorption band emerges, peaking near 0.5 eV for sulfur and selenium and 0.3 eV for tellurium hyperdoped samples. Its strength and width increase with impurity concentration. Its strength decreases markedly with subsequent thermal annealing. The emergence of a broad MIR absorption band is consistent with the formation of an impurity band from isolated deep donor levels as the concentration of chalcogen atoms in metastable local configurations increases.Engineering and Applied Science

Growth of Co

The effects of the deposition temperature and laser energy on the characteristics of Co2MnAl films deposited on GaAs substrates were investigated. The grown films were characterized by AFM for film roughness and surface topography. Film thickness and elemental composition were measured using Rutherford Back Scattering (RBS) technique, while crystalline structure and phase composition were investigated by XRD. The RBS measurements showed that the stochiometry of the films was satisfactory and very close to that of the target Co: 0.5, Mn: 0.25, Al: 0.25. The thickness of the films was found to increase as the laser energy was increased from 200 to 400 mJ, in particular for the films deposited at 400 °C. We also found an increase in the films thicknesses as the deposition temperature was increased for the samples grown at 200 and 300 mJ. The best film quality as deduced from XRD, RBS and AFM results for producing these single layers were those deposited at 600 °C with the laser energy at 300 mJ

Excimer laser processing of novel materials for optoelectronic and spintronic applications

The interaction of the highly energetic pulsed excimer laser beam with a target material induces non-equilibrium physico-chemical processes which could be harnessed to synthesize a variety of novel and technologically attractive materials that are difficult to grow using more conventional thin film deposition techniques. In this paper, recent advances on two excimer laser based techniques that we have used in the processing of thin films and surfaces will be presented. First, we demonstrate the synthesis, by Pulsed Laser Melting (PLM), of silicon supersaturated with sulfur at concentrations several orders of magnitude greater than the solubility limit of silicon alloys, with strong sub-bandgap optical absorption. This material has potential applications in the fabrication of Si-based opto-electronic devices. Second, the capability of Remote Plasma Pulsed Laser Deposition (RP-PLD) in synthesizing the meta-stable half-metallic CrO2 compound that is of great interest in the field of spintronics was assessed. Infra-Red spectroscopy and Magnetic Force Microscopy indicate that the use of the remote plasma is beneficial to the formation of the CrO2 phase, at a deposition pressure of 30 mTorr and for deposition temperature below 350°C. Atomic Force Microscopy and Magnetic Force Microscopy studies respectively show that films containing the Cr02 phase have significantly different surface topography and magnetic characteristics from those in which the Cr2O3 phase is dominant

Formation of Single Crystal Sulfur Supersaturated Silicon Based Junctions by Pulsed Laser Melting

The authors demonstrate the formation of pn and nn+ junctions based on silicon supersaturated with sulfur (up to 0.46 at. %) using a combination of ion implantation and pulsed laser melting. Silicon wafers were implanted at 200 keV 32S+ to doses ranging from 1×1015 to 1×1016 ions/cm2 and subsequently melted and resolidified by using a homogenized excimer laser pulse. Above a threshold laser fluence of ~1.4 J/cm2, the process produces a single crystal supersaturated alloy, free of extended defects, with a sharp junction between the laser melted layer and the underlying substrate, located near the maximum penetration of the melt front. Hall effect measurements indicate that the laser melted layers are n doped with a free carrier density up to 8×1018/cm3 that decreases by one-third upon postirradiation furnace annealing at 550 °C. Dark current-voltage measurements performed on these structures show good rectifying behavior. The photovoltaic characteristics of the junctions were enhanced by postirradiation annealing at 550–800 °C. These effects are attributed to the evolution of a population of point defects that survive the laser treatment. The influence of ion implantation dose, laser fluence, and annealing temperature on the properties of the junctions is also presented and discussed.Engineering and Applied Science

Interaction between confined phonons and photons in periodic silicon resonators

International audienceIn this paper, we demonstrate that phonons and photons of different momenta can be confined and interact with each other within the same nanostructure. The interaction between confined phonons and confined photons in silicon resonator arrays is observed by means of Raman scattering. The Raman spectra from large arrays of dielectric silicon resonators exhibited Raman enhancement accompanied with a downshift and broadening. The analysis of the Raman intensity and line shape using finite-difference time-domain simulations and a spatial correlation model demonstrated an interaction between photons confined in the resonators and phonons confined in highly defective regions prompted by the structuring process. It was shown that the Raman enhancement is due to collective lattice resonance inducing field confinement in the resonators, while the spectra downshift and broadening are signatures of the relaxation of the phonon wave vector due to phonon confinement in defective regions located in the surface layer of the Si resonators. We found that as the resonators increase in height and their shape becomes cylindrical, the amplitude of their coherent oscillation increases and hence their ability to confine the incoming electric field increases

Synthesis of Ag and Cd nanoparticles by nanosecond-pulsed discharge in liquid nitrogen

International audienceThe synthesis of CdO, Ag2O (5 nm) and Ag (~20-30 nm) nano-objects is achieved simultaneously by nanosecond-pulsed discharges in liquid nitrogen between one cadmium electrode and one silver electrode. Oxidation occurs when liquid nitrogen is fully evaporated and nanoparticles are in contact with the air. No alloy is formed, whatever the conditions, even though both elements are present simultaneously, as showed by time-resolved optical emission spectroscopy. This lack of reactivity between elements is attributed to the high pressure within the discharge that keeps each metallic vapor around the electrode it comes from. Each element exhibits a specific behavior. Cubic Cd particles, formed at 4 kV, get elongated with filamentary tips when the applied voltage reaches 7 and 10 kV. Cd wires are formed by assembly in liquid nitrogen of Cd nanoparticles driven by dipole assembly, and not by dielectrophoresis. On the contrary, silver spherical particles get assembled into 2D dendritic structures. The anisotropic growth of these structures is assumed to be due to the existence of pressure gradients