Diffusion on semiconductor surfaces

Semiconductor devices continue to get ever smaller, which means that individual defects play an increasingly important role in their performance. In the process of fabricating more innovative, better performing devices, crystal growers have developed an amazing intuition about how atoms and molecules behave on crystal surfaces. Their intuition, formed from knowledge of fundamental atomic-scale processes and honed through experience, concerns such questions as where atoms and molecules stick, how they interact with each other and the substrate, and how they diffus

Highly Effective GeNi Alloy Contact Diffusion Barrier for BiSbTe Long-Term Thermal Exposure

A GeNi alloy diffusion barrier for contacts on bismuth antimony telluride is proposed. Multiple gold contact diffusion barriers were tested at different thermal aging conditions in air and reducing atmospheres. Among all diffusion barriers, the GeNi alloy barrier shows the best performance for bulk samples with no substantial degradation of the contact resistance, no contact color change, and no change of thermoelectric properties. We observed DAu−GeNi = (9.8 ± 2.7) × 10−20 m2/s within the GeNi alloy barrier, which is 4 times smaller than DAu−BiSbTe. The presence of the initial Ge layer also proves to be effective in reducing nickel diffusion yielding DNi−BiSbTe = (8.57 ± 0.49) × 10−19 m2/s. During GeNi alloy formation, Ge diffusion into BiSbTe produces GeTe, which apparently blocks the van der Waals gaps eliminating Au and Ni fast diffusion pathways. Thermal aging of BiSbTe nanowires shows that Au and Ni diffusion degrades the thermoelectric power factor, whereas the GeNi alloy barrier sample is mostly preserved. The GeNi alloy barrier is a reliable solution to long-term thermal applications of BiTe-based materials

Diffusion Kinetics in the Pd/Cu(001) Surface Alloy

We use atom-tracking scanning tunneling microscopy to study the diffusion of Pd in the Pd/Cu(001) surface alloy. By following the motion of individual Pd atoms incorporated in the surface, we show that Pd diffuses by a vacancy-exchange, mechanism. We measure an effective activation energy for the diffusion of incorporated Pd atoms of 0.88 eV, which is consistent with an ab initio calculated barrier of 0.94 eV

Diffusional kinetics of SiGe Dimers on Si(100) using atom-tracking scanning tunneling microscopy

Quantitative measurements of the diffusion of adsorbed mixed Ge-Si dimers on the Si(100) surface have been made as a function of temperature using atom-tracking scanning tunneling microscopy. These mixed dimers are distinguishable from pure Si-Si dimers by their characteristic kinetics--a 180-degree rotation between two highly buckled configurations. At temperatures at which the mixed dimers diffuse, atomic-exchange events occur, in which the Ge atom in the adsorbed dimer exchanges with a substrate Si atom. Re-exchange can also occur when the diffusing Si-Si dimer revisits the original site of exchange

Atomic-scale identification of Ge/Si intermixing on Si(100) at submonolayer Ge coverages

The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions

Highly Effective GeNi Alloy Contact Diffusion Barrier for BiSbTe Long-Term Thermal Exposure

A GeNi alloy diffusion barrier for contacts on bismuth antimony telluride is proposed. Multiple gold contact diffusion barriers were tested at different thermal aging conditions in air and reducing atmospheres. Among all diffusion barriers, the GeNi alloy barrier shows the best performance for bulk samples with no substantial degradation of the contact resistance, no contact color change, and no change of thermoelectric properties. We observed DAu−GeNi = (9.8 ± 2.7) × 10−20 m2/s within the GeNi alloy barrier, which is 4 times smaller than DAu−BiSbTe. The presence of the initial Ge layer also proves to be effective in reducing nickel diffusion yielding DNi−BiSbTe = (8.57 ± 0.49) × 10−19 m2/s. During GeNi alloy formation, Ge diffusion into BiSbTe produces GeTe, which apparently blocks the van der Waals gaps eliminating Au and Ni fast diffusion pathways. Thermal aging of BiSbTe nanowires shows that Au and Ni diffusion degrades the thermoelectric power factor, whereas the GeNi alloy barrier sample is mostly preserved. The GeNi alloy barrier is a reliable solution to long-term thermal applications of BiTe-based materials

A Platform for Thermal Property Measurements and Transmission Electron Microscopy of Nanostructures

Measurements of the electrical and thermal transport properties of one-dimensional nanostructures (e.g., nanotubes and nanowires) typically are obtained without detailed knowledge of the specimens atomic-scale structure or defects. To address this deficiency, we have developed a microfabricated, chip-based characterization platform that enables both transmission electron microscopy (TEM) of atomic structure and defects as well as measurement of the thermal transport properties of individual nanostructures. The platform features a suspended heater line that contacts a suspended nanostructure/nanowire at its midpoint, which is placed on the platform using in-situ scanning electron microscope nanomanipulators. Because the nanostructure is suspended across a through-hole, we have used TEM to characterize the atomic and defect structure (dislocations, stacking faults, etc.) of the test sample. As a model study, we report the use of this platform to measure the thermal conductivity and defect structure of GaN nanowires. The utilization of this platform for the measurements of other nanostructures will also be discussed.National Science Foundation (U.S.). Science and Technology of Nanoporous Metal Films (Award No. 0506830)Sandia National Laboratories. Laboratory-Directed Research and Development (project)United States. National Nuclear Security Administration (contract DE-AC04-94AL85000

Dynamics of the Si(111) surface phase transition

The authors have used low-energy electron microscopy to investigate the dynamics of the Si(111) 7 x 7 {r_arrow} 1 x 1 phase transition. Because the densities of the two phases differ, the phase transformation is analogous to precipitation in bulk systems: additional material must diffuse to the phase boundaries in order for the transformation to occur. By measuring the size evolution of an ensemble of domains, and comparing the results to simulations, they have identified a new mechanism of precipitate growth. The source of material necessary for the transformation is the random creation of atom/vacancy pairs at the surface. This mechanism contrasts sharply with classical theories of precipitation, in which mass transport kinetics determine the rate of transformation