5,568 research outputs found
Picosecond photoinduced optical anisotropy in trans-(CH)x : direct measurement of soliton diffusion
Journal ArticlePhotoinduced dichroism caused by bleaching of the interband transition in trans - (CH)X was observed in the picosecond time domain. The bleaching is induced instantaneously and decays with time as t - 1 / 2 , changing to a lower power after ~ 50 ps. Although the photoinduced bleaching persists to long times, polarization memory is lost after ~ 10-9s. The results provide a measurement of the diffusion constant of the charged excitations; D ≈ 2 x 10-2 cm2 s - 1 at 300K and 80K
Picosecond photoinduced transmission associated with deep traps in phosphorous doped α-Si:H
Journal ArticlePhotoinduced transmission was observed in the picosecond time domain in phosphorusdoped a-Si:H and connected with deep hole traps produced by doping. The hole transport was found to be dispersive starting before 5 ps and temperature dependent. This shows that the energy distribution of shallow traps is exponential beginning below 10-2 eV from the valence-band top. The deep traps are negatively charged defects, the trapped holes are removed from the recombination process, and their distribution peaks at 0.45 eV above the valence-band top
Picosecond photoinduced dichroism in trans-(CH)x: direct measurement of soliton diffusion
Journal ArticlePhotoinduced dichroism caused by bleaching of the interband transition in tran s-(CH)x was observed in the picosecond time domain,, The bleaching is induced instantaneously and decays with time as £~1 / / 2 , changing to a lower power after ~50 psec. Although the photoinduced bleaching persists to long times, polarization memory is lost after ~10"9 sec. The results provide a measurement of the diffusion constant of the charged excitations; D^ 2x 10"2 cm2 sec"1 at 300 and 80 K
Picosecond trapping of photocarriers in amorphous silicon
Journal ArticleTrapping of photoexcited carriers in the picosecond and subnanosecond time domains was studied by measuring the decay of photoinduced absorption (PA) in a-Si, a-Si:F, a-Si:H, and a-Si:H:F. We found that when the midgap density of states decreases, both the trapping time and its temperature dependence increase. The observed PA decays are compared to the picosecond photoconductivity decays, and the differences in the response curves are explained. The possibility that geminate recombination might explain our results is ruled out
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Optimization of the LHC Interaction Region With Respect to Beam-Induced Energy Deposition
Energy deposition in the superconducting magnets by particles from p-p collisions is a significant challenge for the design of the LHC high luminosity insertions. We have studied the dependence of the energy deposition on the apertures and strengths of insertion magnets and on the placement of absorbers in front of and within the quadrupoles. Monte Carlo simulations were made using the code DTUJET to generate 7 x 7 TeV p-p events and the code MARS to follow hadronic and electromagnetic cascades induced in the insertion components. The 3D geometry and magnetic field descriptions of the LHC-4.1 lattice were used. With a quadrupole coil aperture 70 mm, absorbers can be placed within the magnet bore which reduce the peak power density, at full luminosity, below 0.5 mW/g, a level that should allow the magnets to operate at their design field. The total heat load can be removed by a cooling system similar to that used in the main magnets
Dual equilibrium in a finite aspect ratio tokamak
A new approach to high pressure magnetically-confined plasmas is necessary to
design efficient fusion devices. This paper presents an equilibrium combining
two solutions of the Grad-Shafranov equation, which describes the
magnetohydrodynamic equilibrium in toroidal geometry. The outer equilibrium is
paramagnetic and confines the inner equilibrium, whose strong diamagnetism
permits to balance large pressure gradients. The existence of both equilibria
in the same volume yields a dual equilibrium structure. Their combination also
improves free-boundary mode stability
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