Analiza i unapređenje proizvodnje transmitera u IHTM-u

In this paper analyzes the technology of production of these IHTM transmitters in relation to the other side of competition. QFD analysis gives us the direction to be moving production of local transmitters. Foreign manufacturers of transmitters are the leaders of the quality, design and new technology. The results speak about the necessity of implementation of quality management in IHTM-in based on the ISO 9001:2000 series of standards in terms of improving the competitive advantages of domestic companies. Competitiveness of domestic manufacturer of transmitters in relation to the overseas must be reflected in the improvement of existing transmitters, and the introduction of quality system ISO 9001:2000 as well as expansion of the range of new products required (SMART transmitters).U ovom radu je analizirana tehnologija proizvodnje IHTM-ovih transmitera u odnosu na ostale strane konkurente. QFD analiza nam daje kojim pravcem treba da se kreće proizvodnja domaćih transmitera. Inostrani proizvođači transmitera su lideri po kvalitetu izrade, dizajnu i osvajanju novih tehnologija. Prikazani rezultati govore o neophodnosti implementacije koncepta upravljanja kvalitetom u IHTM-u na osnovu serije standarda ISO 9001:2000, u funkciji poboljšanja konkurentske prednosti domaćih preduzeća. Konkurentnost domaćeg proizvođača transmitera u odnosu na inostrane mora da se ogleda u poboljšanju kvaliteta postojećih transmitera i uvođenje sistema kvaliteta ISO 9001:2000 kao i proširenje asortimana na nove tražene proizvode (SMART transmiteri)

A simple boundary condition at semiconductor-insulating substrate interface of a TFT

Using the Wexler, Green and Miles (WGM) procedure, a criterion is given for neglecting the electric field in insulating substrate of a Thin Film Transistor in presence of surface states. It is shown that this is fulfilled for a real TFT

Dependance of avalanche photodiode characteristics on active area geometry

The work presents an analysis of avalanche photodiode (APD) with spherical p-n junction. The calculation results are given for the dependence of the avalanche multiplication and noise parameters on geometry and on the incident light wavelength. As an example we modeled one structure for Si-APD and one structure for InGaAs/InP-APD. The novel structure has lower or comparable noise factors in comparison with the best of the reach-through APDs and earlier works of these authors on the spherical contact surface APDs. InGaAs/InP-APD are modeled to show the possibility of using the spherical p-n junction for that type of APD.Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2); Nis, Serbia; ; 12 September 1995 through 14 September 1995

Characteristics of an avalanche photodiode with a spherical contact surface

The work presents an analysis of an avalanche photodiode (APD) with a spherical contact surface. We calculated the dependence of the avalanche multiplication and noise parameters on the incident light wavelength. Multiplication and noise parameters are compared with the literature data for ordinary APDs at six wavelengths (500, 600, 700, 800, 850 and 900 nm). For shorter wavelengths (800 nm and below), the noise factors of the presented structure are lower or comparable with those of the best of the reach-through APD. Thus we propose using the new avalanche photodiode structure as a detector for visible light

Photodiode quantum efficiency optimization using spherical pits on active surfaces

A numerical model of a photodiode with etched spherical pits on an active surface has been developed. Several geometrical parameters (radius of curvature, depth and arrangement of spherical pits, sample thickness and area, and thickness of the anti-reflection layer) were varied and their influence on the quantum efficiency of the structure was considered. It has been shown that the photodiode quantum efficiency can be optimized by the proper choice of these parameters. From the technological point of view, it is very important that the optimized quantum efficiency can be achieved without a strict definition of the device geometry

Diagnostic of silicon piezoresistive pressure sensors by low frequency noise measurements

Low frequency noise measurements can be used as a tool in diagnostics of silicon diaphragm-based piezoresistive pressure sensors after the sensor encapsulation and oil filling process are finished. We measured noise in piezoresistors comprising the Wheatstone bridge of the sensor. Our results show that oil filling process causes a noise decrease, particularly in the low frequency range. This is correlated with the oxide quality and the concentration of surrounding ions above the free oxide surface, as well with the fluctuation of adsorption-desorption (AD) processes of charged particles at the free oxide surface and trapping/detrapping processes at the oxide/silicon interface. A model for the piezoresistor noise due to fluctuations caused by the AD processes and a criterion for screening the sensors based on noise measurements are proposed

Investigation of surface energy states on Si by photoacoustic spectroscopy

The spectral and dynamic characteristics of surface energy states on Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of excitation optical beam by PA spectrometer. The PA amplitude spectra of Si samples (n-Si wafer, 500 ωcm) with various surface qualities were studied at room temperature in the range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies (10, 40 and 160 Hz). The difference PA amplitude spectra of incoming Si wafer and Si wafer with mechanically roughened surface for various modulation frequencies indicate the energy distribution and the dynamics of the surface electronic states (SES)

Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions

The static characteristics (potential and electric field distributions) of sandwich structures of a metal 1-insulator 1-nondegenerated semiconductor-insulator 2-metal 2 (M1I1S I2M2)-type are analyzed. A theory is given with help of which the semiconductor surface potentials ψ1 and ψ2 as a function of applied voltage, type and thickness of insulator and semiconductor layers, metal-semiconductor work function difference and effective density of surface charges, can be found. Numerical calculations and diagrams with corresponding approximated analytical expressions are given for the case of a symmetrical MISIM structure with intrinsic semiconductor

Energy spectra and dynamics of surface states on silicon investigated by the photoacoustic method

The spectral and dynamic characteristics of surface energy states (SES) on a Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of the excitation optical beam by the PA spectrometer. The PA amplitude spectra of Si samples of various surface quality were studied at room temperature in the spectral range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies. The difference in PA amplitude spectra of an as-received Si wafer and a Si wafer with a mechanically roughened surface for various modulation frequencies indicates the energy distribution and the dynamics of the SES. A change in the PA amplitude signal for various modulation frequencies indicates the temporal distribution of the SES for a fixed energy of excitation.Conference: 12th International Conference on Photoacoustic and Photothermal Phenomena (12 ICPPP) Location: Toronto, Canada; Date: JUN 24-27, 200

Investigation of SiO/sub 2/ film on Si substrate by photoacoustic method

The effect of SiO/sub 2/ film on Si substrata (SiO/sub 2//Si) was investigated by photoacoustic spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. The amplitude PA spectra of Si wafer are analogous to the optical absorption spectra. On the other side, the amplitude PA spectra of SiO/sub 2//Si sample show the significant difference. In the energy range above the energy gap of Si, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO/sub 2//Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra of Si wafer and SiO/sub 2//Si structure show the significant difference. The PA signal in this case is the consequence of the electronic states formed on dielectric-semiconductor interface, i.e., the influence of the interface trapped states on the thermal and electronic transport processes in SiO/sub 2//Si junction.Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004; Nis; Yugoslavia; 16 May 2004 through 19 May 2004