A low-temperature X-ray diffraction study of the CU2ZNSNSE4 thin films on a mo foil substrate

The Zn-rich and Cu-poor Cu2ZnSnSe4 (CZTSe) thin films were produced on flexible Mo foil by the three-step process. The XRD analysis demonstrates that the film mainly consists of CZTSe tetragonal phase and can contained ZnSe secondary phase. In addition, there are reflections of Mo and MoSe2. It was found that the crystal structure of the CZTSe films deposited on a Mo foil substrate was stable at low temperatures. The lattice parameters a and c are linearly decreasing in rang 5.707–5.637 and 11.394–11.298 A, respectively, with a change in the temperature of the X-ray measurements from the 300 to 100 K. The thermal expansion coefficient is 9.87 ? 10–6 K–1

СИНТЕЗ, ЭЛЕКТРИЧЕСКИЕ И МАГНИТНЫЕ СВОЙСТВА ПЛЕНОК ЭВТЕКТИЧЕСКОГО СОСТАВА СИСТЕМЫ GaSb-MnSb

The results of the technology and electrical and magnetic properties study of eutectic GaSb-MnSb films are presented. Eutectic GaSb-MnSb films ranging in thickness from 80 to 130 nm have been grown on sapphire substrates by pulsed laser deposition using mechanical droplet separation.Приведены результаты технологии получения и исследования электрических, магнитных свойств пленок эвтектического состава системы GaSb-MnSb толщиной 80-130 нм, полученных импульсным лазерным осаждением с использованием механической сепарации капель на лейкосапфировых подложках

Reststrahlen of CdP2 single crystals at low temperatures

A dispersion analysis of reflectance spectra of CdP2 crystals was performed and the dispersion parameters were obtained in the far infrared region (FIR) at different temperatures for the first time. Dielectric permittivity was obtained for the polarization along the a- and c-axes of a single crystal. Phonon modes are described by their oscillator parameters, i.e. the frequency, oscillator strength and the damping constant. Temperature dependence of these parameters is discussed. (C) 2014 Elsevier B.V. All rights reserved

The synthesis, electric and magnetic properties of films witH eftectic composition of GаSb-MnSb system

The results of the technology and electrical and magnetic properties study of eutectic GaSb-MnSb films are presented. Eutectic GaSb-MnSb films ranging in thickness from 80 to 130 nm have been grown on sapphire substrates by pulsed laser deposition using mechanical droplet separation

Effect of the low temperatures on the Raman active vibrational modes in ZnP2 and CdP2

Raman spectroscopy has proven to be a widely used tool for investigation the vibrational properties of diphosphides ZnP2 and CdP2 over a wide range of temperature change. The temperature dependence of the vibrational modes in the diphosphides ZnP2 and CdP2 has been studied by employing Raman spectroscopy in the 3-300 K temperature range. The influence of the temperature on the phosphorus chains in ZnP2 and CdP2 manifests on the magnitude of the frequency dependent shift of the Raman peaks at lower temperatures. As addition evidence of this phenomenon we have shown and discussed the correlation between the magnitude of frequency shift and the orientation of the sample. (C) 2016 Elsevier B.V. All rights reserved

The synthesis, electric and magnetic properties of films with eftectic composition of GаSb-MnSb system

Приведены результаты технологии получения и исследования электрических, магнитных свойств пленок эвтектического состава системы GaSb-MnSb толщиной 80–130 нм, полученных импульсным лазерным осаждением с использованием механической сепарации капель на лейкосапфировых подложках