Increasing the bit density of a quantum confinement physically unclonable function

This dissertation presents work carried out in collaboration with the IMDEA nanoscience institute. We study the recently proposed quantum confinement physically unclonable function by Roberts, et al. that utilises resonant tunnelling diodes (physical representation of a quantum well) and atomic scale imperfections for applications in cryptography and identification. Presently such entities rely on their resonance peak position as the basis for a new approach to electronic identification systems.By solely relying on the resonance peak of these devices deconvolution outputs an average of 8 bits per device, concatenation of up to 16 devices outputs a satisfactory number of bits for applications in uniqueness. However we explore the possibility of increasing the bit density of such physically unclonable functions that range from tangibly modifying the heterostructure with the use of a focused ion beam to induce quantum effects of 1 dimension (quantum wire) and 0 dimension (quantum dot) that would manifest its self as multiple resonance peaks observed on the current/voltage characteristic.Our findings show multiple devices with consistent new features as a result of modification with the focused ion beam ultimately increasing the bit density. We carry out cryogenic measurements and comment on the fact that such features are not supported by previous work studying resonant tunnelling in the 1 & 0 states of double barrier heterostructures

Cavity-QED implementations for distributive quantum computation

The coupling of a single ion to an optical cavity is a promising route towards scalable quantum technologies. This study presents the design, initial construction and simulations of two different ion traps for quantum computation with novel capabilities. The first system is an end cap system that utilises Fabry Perot cavities formed by the facets of fibres. The small mode volumes (cavity length ~ 300 μm) of the fibre cavities are ideal to achieve high cooperativity and coupling strength. This trap features the novel ability to mechanically adjust the position of the ion by perturbing/distorting the trapping potential with grounded side electrodes. A capability crucial to maximising the ion-cavity coupling. The design incorporates a number of improvements over the previous iteration by Takahashi et al. such as increased optical access, increased mode matching and improved mechanical stability of the cavity. To verify and test the design modifications; Pound-Drever-Hall cavity locking was set up. The test set up failed to lock to an error signal due to a mechanically unstable translation stage. The other design presented is a linear micro trap intended to trap strings of ions and does not use fibre based cavities. This design features multiple different regions reserved for storage, computation and communication and aims to implement a shuttling scheme that will allow the selective loading of single ions from a reservoir of ions into the desired regions. The fabrication process would utilise methods in microfabrication. Simulations of the trapping dynamics were used to optimise the electrode geometries and splitting protocol

Extracting random numbers from quantum tunnelling through a single diode

Random number generation is crucial in many aspects of everyday life, as online security and privacy depend ultimately on the quality of random numbers. Many current implementations are based on pseudo-random number generators, but information security requires true random numbers for sensitive applications like key generation in banking, defence or even social media. True random number generators are systems whose outputs cannot be determined, even if their internal structure and response history are known. Sources of quantum noise are thus ideal for this application due to their intrinsic uncertainty. In this work, we propose using resonant tunnelling diodes as practical true random number generators based on a quantum mechanical effect. The output of the proposed devices can be directly used as a random stream of bits or can be further distilled using randomness extraction algorithms, depending on the application

N-state random switching based on quantum tunnelling

In this work, we show how the hysteretic behaviour of resonant tunnelling diodes (RTDs) can be exploited for new functionalities. In particular, the RTDs exhibit a stochastic 2-state switching mechanism that could be useful for random number generation and cryptographic applications. This behaviour can be scaled to N-bit switching, by connecting various RTDs in series. The InGaAs/AlAs RTDs used in our experiments display very sharp negative differential resistance (NDR) peaks at room temperature which show hysteresis cycles that, rather than having a fixed switching threshold, show a probability distribution about a central value. We propose to use this intrinsic uncertainty emerging from the quantum nature of the RTDs as a source of randomness. We show that a combination of two RTDs in series results in devices with three-state outputs and discuss the possibility of scaling to N-state devices by subsequent series connections of RTDs, which we demonstrate for the up to the 4-state case. In this work, we suggest using that the intrinsic uncertainty in the conduction paths of resonant tunnelling diodes can behave as a source of randomness that can be integrated into current electronics to produce on-chip true random number generators. The N-shaped I-V characteristic of RTDs results in a two-level random voltage output when driven with current pulse trains. Electrical characterisation and randomness testing of the devices was conducted in order to determine the validity of the true randomness assumption. Based on the results obtained for the single RTD case, we suggest the possibility of using multi-well devices to generate N-state random switching devices for their use in random number generation or multi-valued logic devices.</p