Controlling the Electronic Structure of Bilayer Graphene

We describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission. By selectively adjusting the carrier concentration in each layer, changes in the Coulomb potential led to control of the gap between valence and conduction bands. This control over the band structure suggests the potential application of bilayer graphene to switching functions in atomic-scale electronic devices

Quasiparticle dynamics in graphene

The effectively massless, relativistic behaviour of graphene's charge carriers—known as Dirac fermions—is a result of its unique electronic structure, characterized by conical valence and conduction bands that meet at a single point in momentum space (at the Dirac crossing energy). The study of many-body interactions amongst the charge carriers in graphene and related systems such as carbon nanotubes, fullerenes and graphite is of interest owing to their contribution to superconductivity and other exotic ground states in these systems. Here we show, using angle-resolved photoemission spectroscopy, that electron–plasmon coupling plays an unusually strong role in renormalizing the bands around the Dirac crossing energy—analogous to mass renormalization by electron–boson coupling in ordinary metals. Our results show that electron–electron, electron–plasmon and electron–phonon coupling must be considered on an equal footing in attempts to understand the dynamics of quasiparticles in graphene and related systems

Localized states influence spin transport in epitaxial graphene

We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001) (MLEG). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements in MLEG and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.Comment: 6 pages, 3 figures, including supplementary materia

Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of tau_S is probably related to the changed substrate, while the cause for the small value of D_S remains an open question.Comment: 16 pages, 3 figures, 1 tabl

Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene

We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunneling contact are found to strongly impact on NDR through the electron interference. Our result provides an atomic-level understanding of quantum tunneling in bilayer graphene, and constitutes a useful step towards graphene-based tunneling devices. DOI: 10.1103/PhysRevLett.110.036804X11109sciescopu

Band structure and many body effects in graphene

We have determined the electronic bandstructure of clean and potassium-doped single layer graphene, and fitted the graphene π bands to a one- and three-near-neighbor tight binding model. We characterized the quasiparticle dynamics using angle resolved photoemission spectroscopy. The dynamics reflect the interaction between holes and collective excitations, namely plasmons, phonons, and electron-hole pairs. Taking the topology of the bands around the Dirac energy for n-doped graphene into account, we compute the contribution to the scattering lifetimes due to electron-plasmon and electron phonon coupling

The interaction of Xe and Xe + K with graphene

We have investigated the electronic properties of monolayer graphene with adsorbed layers of xenon or potassium, or a combination of the two. The formation of the first Xe layer is characterized by a dipole polarization which is quenched by a second Xe layer. By comparing K on Xe on graphene to K on bare graphene, we determine the K contribution to trigonal warping and mass renormalization due to electron–phonon coupling. The former is found to be small but significant, while the latter is shown to be negligible. Thus, previously determined values of electron–phonon coupling for K on graphene are shown to be intrinsic to doped graphene and not determined by the proximity of K ions to the graphene