Synthesis of binary and ternary semiconductors by means of microwave irradiation

Pure CdTe and CuInSe2 are prepared with high yields and short reaction times starting from metal or binary alloy powders and irradiating the mixture with a microwave radiation of a 2.45 GHz of frequency and 1000 W of power under argon atmosphere. It was possible to successfully synthesize extremely pure CuInSe2 single crystalline phase, differently from a multi-phase mixture as expected from the phase diagram Cu2Se-In2Se3. XRD and SEM analyses, performed for the characterization, have confirmed the success of the process

Double doping: a method to decrease dislocation densities in LEC InP crystals

In this paper we shall report on the characteristics of LEC InP double doped with Cd and Te. Unlike (Cd,S)-doped material, (Cd, Te)-doped InP is p-type, with low-carrier concentration. In the following, the results of structural and electrical analysis carried out on several LEC InP crystals co-doped with Cd and Te are presented. The role of multiple doping as a strategy for dislocation reduction will also be discussed