5 research outputs found
Characterization of Optical and Photoelectrical Properties of ZnO Crystals
We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination
Characterization of Optical and Photoelectrical Properties of ZnO Crystals
We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination
Characterization of Optical and Photoelectrical Properties of ZnO Crystals
We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently
grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold
values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline
quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are
explained by defect-related and intrinsic mechanisms of recombination