5,023 research outputs found

    Pulsed Ultrasound Does Not Affect Recovery From Delayed Onset Muscle Soreness

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    Aim: To investigate the effects of pulsed Ultrasound (US) in recovery from Delayed Onset Muscle Soreness (DOMS). Methods: Twelve healthy male athletes (mean age 23.83±1.697 year) performed an eccentric exercise protocol of non-dominant elbow flexors to induce muscle soreness on 2 occasions separated by 3 weeks. Subjects in experimental group received pulsed US (1 MHz, intensity 0.8 W/cm2, mark space ratio 1:10), whereas control group received sham US after 24 h, 48 h and 72 h. Perception of muscle soreness, active ROM and muscle strength were the parameters measured at 0 h, 24 h, 48 h and 72 h with the help of VAS, manual goniometer and JONEX muscles master instrument respectively. Results: Post hoc t test analysis revealed significant differences (p <0.05) between 0 h and 72 h in the parameter of ROM (t = 6.18) and muscle power (t = 2.54) as well as between 24 h and 48 h in the parameter of muscle soreness (t = 3.13) in control group. Similar differences were also observed in the experimental group. No significant inter-group differences at α level of 0.05 was observed in any parameter at any level. Conclusion: The pattern of recovery from DOMS was not influenced by the application of pulsed Ultrasound at the parameters discussed here

    Ultrafast relaxation of hot phonons in Graphene-hBN Heterostructures

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    Fast carrier cooling is important for high power graphene based devices. Strongly Coupled Optical Phonons (SCOPs) play a major role in the relaxation of photoexcited carriers in graphene. Heterostructures of graphene and hexagonal boron nitride (hBN) have shown exceptional mobility and high saturation current, which makes them ideal for applications, but the effect of the hBN substrate on carrier cooling mechanisms is not understood. We track the cooling of hot photo-excited carriers in graphene-hBN heterostructures using ultrafast pump-probe spectroscopy. We find that the carriers cool down four times faster in the case of graphene on hBN than on a silicon oxide substrate thus overcoming the hot phonon (HP) bottleneck that plagues cooling in graphene devices.Comment: Pages 1-12: Main manuscript. Pages 13-18: Supplementary materia

    Nonlinear growth generates age changes in the moments of the frequency distribution: the example of height in puberty

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    Higher moments of the frequency distribution of child height and weight change with age, particularly during puberty, though why is not known. Our aims were to confirm that height skewness and kurtosis change with age during puberty, to devise a model to explain why, and to test the model by analyzing the data longitudinally. Heights of 3245 Christ's Hospital School boys born during 1927-1956 were measured twice termly from 9 to 20 years (n = 129 508). Treating the data as independent, the mean, standard deviation (SD), skewness, and kurtosis were calculated in 40 age groups and plotted as functions of age t. The data were also analyzed longitudinally using the nonlinear random-effects growth model H( t) = h( t - epsilon) + alpha, with H( t) the cross-sectional data, h( t) the individual mean curve, and epsilon and alpha subject-specific random effects reflecting variability in age and height at peak height velocity (PHV). Mean height increased monotonically with age, while the SD, skewness, and kurtosis changed cyclically with, respectively, 1, 2, and 3 turning points. Surprisingly, their age curves corresponded closely in shape to the first, second, and third derivatives of the mean height curve. The growth model expanded as a Taylor series in e predicted such a pattern, and the longitudinal analysis showed that adjusting for age at PHV on a multiplicative scale largely removed the trends in the higher moments. A nonlinear growth process where subjects grow at different rates, such as in puberty, generates cyclical changes in the higher moments of the frequency distribution

    Evolution of the electronic band structure of twisted bilayer graphene upon doping

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    The electronic band structure of twisted bilayer graphene develops van Hove singularities whose energy depends on the twist angle between the two layers. Using Raman spectroscopy, we monitor the evolution of the electronic band structure upon doping using the G peak area which is enhanced when the laser photon energy is resonant with the energy separation of the van Hove singularities. Upon charge doping, the Raman G peak area initially increases for twist angles larger than a critical angle and decreases for smaller angles. To explain this behavior with twist angle, the energy of separation of the van Hove singularities must decrease with increasing charge density demonstrating the ability to modify the electronic and optical properties of twisted bilayer graphene with doping.Comment: 10 pages, 4 figure
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