18 research outputs found

    十三年來法幣政策之檢討

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    Semiconducting Pavonites CdMBi<sub>4</sub>Se<sub>8</sub> (M = Sn and Pb) and Their Thermoelectric Properties

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    Two new compounds CdPbBi<sub>4</sub>Se<sub>8</sub> and CdSnBi<sub>4</sub>Se<sub>8</sub> adopt the pavonite structure type and crystallize in the monoclinic space group <i>C</i>2/<i>m</i> with <i>a</i> = 13.713(3) Å, <i>b</i> = 4.1665(8) Å, <i>c</i> = 15.228(3) Å, β = 115.56(3)° for CdPbBi<sub>4</sub>Se<sub>8</sub>; <i>a</i> = 13.679 Å, <i>b</i> = 4.153 Å, <i>c</i> = 15.127 Å, β = 115.51° for CdSnBi<sub>4</sub>Se<sub>8</sub>. Their crystal structures are composed of two different types of polyhedral slabs, one containing a mixture of one octahedron [MSe<sub>6</sub>] block and paired squared pyramids [MSe<sub>5</sub>], while the other forms distorted galena-type (or NaCl-type) lattices with three [MSe<sub>6</sub>] octahedral chains (M = Pb, Cd, Bi, Sn). Both CdPbBi<sub>4</sub>Se<sub>8</sub> and CdSnBi<sub>4</sub>Se<sub>8</sub> are stable up to ∼970 K. Density functional theory (DFT) calculations show that both CdPbBi<sub>4</sub>Se<sub>8</sub> and CdSnBi<sub>4</sub>Se<sub>8</sub> are indirect band gap semiconductors. DFT phonon dispersion calculations performed on CdSnBi<sub>4</sub>Se<sub>8</sub> give valuable insights as to the origin of the observed low experimental lattice thermal conductivities of ∼0.58 W m<sup>–1</sup> K<sup>–1</sup> at 320 K. The title compounds exhibit n-type conduction, and they exhibit promising thermoelectric properties with a maximum thermoelectric figure of merit, ZT, reaching 0.63 for CdPbBi<sub>4</sub>Se<sub>8</sub>, and 0.40 for CdSnBi<sub>4</sub>Se<sub>8</sub> at 850 K

    Semiconducting Pavonites CdMBi<sub>4</sub>Se<sub>8</sub> (M = Sn and Pb) and Their Thermoelectric Properties

    No full text
    Two new compounds CdPbBi<sub>4</sub>Se<sub>8</sub> and CdSnBi<sub>4</sub>Se<sub>8</sub> adopt the pavonite structure type and crystallize in the monoclinic space group <i>C</i>2/<i>m</i> with <i>a</i> = 13.713(3) Å, <i>b</i> = 4.1665(8) Å, <i>c</i> = 15.228(3) Å, β = 115.56(3)° for CdPbBi<sub>4</sub>Se<sub>8</sub>; <i>a</i> = 13.679 Å, <i>b</i> = 4.153 Å, <i>c</i> = 15.127 Å, β = 115.51° for CdSnBi<sub>4</sub>Se<sub>8</sub>. Their crystal structures are composed of two different types of polyhedral slabs, one containing a mixture of one octahedron [MSe<sub>6</sub>] block and paired squared pyramids [MSe<sub>5</sub>], while the other forms distorted galena-type (or NaCl-type) lattices with three [MSe<sub>6</sub>] octahedral chains (M = Pb, Cd, Bi, Sn). Both CdPbBi<sub>4</sub>Se<sub>8</sub> and CdSnBi<sub>4</sub>Se<sub>8</sub> are stable up to ∼970 K. Density functional theory (DFT) calculations show that both CdPbBi<sub>4</sub>Se<sub>8</sub> and CdSnBi<sub>4</sub>Se<sub>8</sub> are indirect band gap semiconductors. DFT phonon dispersion calculations performed on CdSnBi<sub>4</sub>Se<sub>8</sub> give valuable insights as to the origin of the observed low experimental lattice thermal conductivities of ∼0.58 W m<sup>–1</sup> K<sup>–1</sup> at 320 K. The title compounds exhibit n-type conduction, and they exhibit promising thermoelectric properties with a maximum thermoelectric figure of merit, ZT, reaching 0.63 for CdPbBi<sub>4</sub>Se<sub>8</sub>, and 0.40 for CdSnBi<sub>4</sub>Se<sub>8</sub> at 850 K
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