88 research outputs found
Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials
The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition. We reveal that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation- or growth-dominated), to the hetero-crystallization mechanism, which resulted in a significant increase in PCRAM speeds. Reducing the grain size can further increase the speed of phase-change. Such grain size effect on speed becomes increasingly significant at smaller device sizes. Together with the nano-thermal and electrical effects, fast phase-change, good stability and high endurance can be achieved. These findings lead to a feasible solution to achieve a universal memory
Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices.
The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change materials. In this perspective, unravelling the atomistic structure that originates the improvements in switching time and switching energy is paramount in order to design nanoscale structures with even enhanced functional properties. This study reveals a high- resolution atomistic insight of the [GeTe/Sb2Te3] interfacial structure by means of Extended X-Ray Absorption Fine Structure spectroscopy and Transmission Electron Microscopy. Based on our results we propose a consistent novel structure for this kind of chalcogenide superlattices
Calculation of optical constant of amorphous germanium arsenoselenide wedge-shaped thin films from their shrunk transmittance and reflectance spectra
Long and Short Range Magnetic Interactions and Electric Switching in Highly Doped, “Amorphous” Ferromagnetic Semiconductors
Assessment of Se based phase change alloy as a candidate for non-volatile electronic memory applications
Conducting Channels Structure and Dielectric-Metal Switching Stability in Thin amorphous Films
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