103 research outputs found
Negative Giant Longitudinal Magnetoresistance in NiMnSb/InSb: An interface effect
We report on the electrical and magneto-transport properties of the contact
formed between polycrystalline NiMnSb thin films grown using pulsed laser
deposition (PLD) and n-type degenerate InSb (100) substrates. A negative giant
magnetoresistance (GMR) effect is observed when the external magnetic field is
parallel to the surface of the film and to the current direction. We attribute
the observed phenomenon to magnetic precipitates formed during the magnetic
film deposition and confined to a narrow layer at the interface. The effect of
these precipitates on the magnetoresistance depends on the thermal processing
of the system.Comment: 14 pages, 4 figure
Evidence for quantum confinement in the photoluminescence of porous Si and SiGe
We have used anodization techniques to process porous surface regions in p-type Czochralski Si and in p-type Si0.85Ge0.15 epitaxial layers grown by molecular beam epitaxy. The SiGe layers were unrelaxed before processing. We have observed strong near-infrared and visible light emission from both systems. Analysis of the radiative and nonradiative recombination processes indicate that the emission is consistent with the decay of excitons localized in structures of one or zero dimensions
Surface and interface study of pulsed-laser-deposited off-stoichiometric NiMnSb thin films on Si(100) substrate
We report a detailed study of surface and interface properties of
pulsed-laser deposited NiMnSb films on Si (100) substrate as a function of film
thickness. As the thickness of films is reduced below 35 nm formation of a
porous layer is observed. Porosity in this layer increases with decrease in
NiMnSb film thickness. These morphological changes of the ultra thin films are
reflected in the interesting transport and magnetic properties of these films.
On the other hand, there are no influences of compositional in-homogeneity and
surface/interface roughness on the magnetic and transport properties of the
films.Comment: 13 pages, 7 figures, Submitted to Phys. Rev.
Optoelectric spin injection in semiconductor heterostructures without ferromagnet
We have shown that electron spin density can be generated by a dc current
flowing across a junction with an embedded asymmetric quantum well. Spin
polarization is created in the quantum well by radiative electron-hole
recombination when the conduction electron momentum distribution is shifted
with respect to the momentum distribution of holes in the spin split valence
subbands. Spin current appears when the spin polarization is injected from the
quantum well into the -doped region of the junction. The accompanied
emission of circularly polarized light from the quantum well can serve as a
spin polarization detector.Comment: 2 figure
Ballistic spin-polarized transport and Rashba spin precession in semiconductor nanowires
We present numerical calculations of the ballistic spin-transport properties
of quasi-one-dimensional wires in the presence of the spin-orbit (Rashba)
interaction. A tight-binding analog of the Rashba Hamiltonian which models the
Rashba effect is used. By varying the robustness of the Rashba coupling and the
width of the wire, weak and strong coupling regimes are identified. Perfect
electron spin-modulation is found for the former regime, regardless of the
incident Fermi energy and mode number. In the latter however, the
spin-conductance has a strong energy dependence due to a nontrivial subband
intermixing induced by the strong Rashba coupling. This would imply a strong
suppression of the spin-modulation at higher temperatures and source-drain
voltages. The results may be of relevance for the implementation of
quasi-one-dimensional spin transistor devices.Comment: 19 pages (incl. 9 figures). To be published in PR
Filtering spin with tunnel-coupled electron wave guides
We show how momentum-resolved tunneling between parallel electron wave guides
can be used to observe and exploit lifting of spin degeneracy due to Rashba
spin-orbit coupling. A device is proposed that achieves spin filtering without
using ferromagnets or the Zeeman effect.Comment: 4 pages, 4 figures, RevTex
An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device
We present the first spintronic semiconductor field effect transistor.
The injector and collector contacts of this device were made from magnetic
permalloy thin films with different coercive fields so that they could be
magnetized either parallel or antiparallel to each other in different applied
magnetic fields. The conducting medium was a two dimensional electron gas
(2DEG) formed in an AlSb/InAs quantum well.
Data from this device suggest that its resistance is controlled by two
different types of spin-valve effect: the first occurring at the
ferromagnet-2DEG interfaces; and the second occuring in direct propagation
between contacts.Comment: 4 pages, 2 figure
Mesoscopic Stern-Gerlach device to polarize spin currents
Spin preparation and spin detection are fundamental problems in spintronics
and in several solid state proposals for quantum information processing. Here
we propose the mesoscopic equivalent of an optical polarizing beam splitter
(PBS). This interferometric device uses non-dispersive phases (Aharonov-Bohm
and Rashba) in order to separate spin up and spin down carriers into distinct
outputs and thus it is analogous to a Stern-Gerlach apparatus. It can be used
both as a spin preparation device and as a spin measuring device by converting
spin into charge (orbital) degrees of freedom. An important feature of the
proposed spin polarizer is that no ferromagnetic contacts are used.Comment: Updated to the published versio
Measuring the decoherence rate in a semiconductor charge qubit
We describe a method by which the decoherence time of a solid state qubit may
be measured. The qubit is coded in the orbital degree of freedom of a single
electron bound to a pair of donor impurities in a semiconductor host. The qubit
is manipulated by adiabatically varying an external electric field. We show
that, by measuring the total probability of a successful qubit rotation as a
function of the control field parameters, the decoherence rate may be
determined. We estimate various system parameters, including the decoherence
rates due to electromagnetic fluctuations and acoustic phonons. We find that,
for reasonable physical parameters, the experiment is possible with existing
technology. In particular, the use of adiabatic control fields implies that the
experiment can be performed with control electronics with a time resolution of
tens of nanoseconds.Comment: 9 pages, 6 figures, revtex
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