1 research outputs found
Local Strain Engineering in Atomically Thin MoS<sub>2</sub>
Controlling the bandstructure through
local-strain engineering
is an exciting avenue for tailoring optoelectronic properties of materials
at the nanoscale. Atomically thin materials are particularly well-suited
for this purpose because they can withstand extreme nonhomogeneous
deformations before rupture. Here, we study the effect of large localized
strain in the electronic bandstructure of atomically thin MoS<sub>2</sub>. Using photoluminescence imaging, we observe a strain-induced
reduction of the direct bandgap and funneling of photogenerated excitons
toward regions of higher strain. To understand these results, we develop
a nonuniform tight-binding model to calculate the electronic properties
of MoS<sub>2</sub> nanolayers with complex and realistic local strain
geometries, finding good agreement with our experimental results