19,499 research outputs found
Axial and Vector Correlator Mixing in Hot and Dense Hadronic Matter
We study the manifestations of chiral symmetry restoration which have a
significance for the parity mixing. Restricting to pions and nucleons we
establish a formalism for the expression of the vector correlator, which
displays the mixing of the axial correlator into the vector one and unifies the
cases of the heat bath and the dense medium. We give examples of mixing
cross-sections. We also establish a link between the energy integrated mixing
cross-sections and the pion scalar density which governs the quenching factors
of coupling constants, such as the pion decay one, as well as the quark
condensate evolution.Comment: 12 pages, Latex, 4 PostScript Figure
Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC),
the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon
system. Because of its radiation hardness and cost effectiveness, the n-on-p
silicon technology is a promising candidate for a large area pixel detector.
The paper reports on the joint development, by LPNHE and FBK of novel n-on-p
edgeless planar pixel sensors, making use of the active trench concept for the
reduction of the dead area at the periphery of the device. After discussing the
sensor technology, and presenting some sensors' simulation results, a complete
overview of the electrical characterization of the produced devices will be
given.Comment: 9 pages, 9 figures, to appear in the proceedings of the 15th
International Workshops on Radiation Imaging Detector
Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC),
the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon
system. Because of its radiation hardness and cost effectiveness, the n-on-p
silicon technology is a promising candidate for a large area pixel detector.
The paper reports on the joint development, by LPNHE and FBK of novel n-on-p
edgeless planar pixel sensors, making use of the active trench concept for the
reduction of the dead area at the periphery of the device. After discussing the
sensor technology, a complete overview of the electrical characterization of
several irradiated samples will be discussed. Some comments about detector
modules being assembled will be made and eventually some plans will be
outlined.Comment: 6 pages, 13 figures, to appear in the proceedings of the 2013 Nuclear
Science Symposium and Medical Imaging Conference. arXiv admin note: text
overlap with arXiv:1311.162
Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans
to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon
technology is a promising candidate for the pixel upgrade thanks to its
radiation hardness and cost effectiveness, that allow for enlarging the area
instrumented with pixel detectors. We report on the development of novel n-in-p
edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of
the "active edge" concept for the reduction of the dead area at the periphery
of the device. After discussing the sensor technology and fabrication process,
we present device simulations (pre- and post-irradiation) performed for
different sensor configurations. First preliminary results obtained with the
test-structures of the production are shown.Comment: 6 pages, 5 figures, to appear in the proceedings of the 9th
International Conference on Radiation Effects on Semiconductor Materials
Detectors and Device
Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades
The development of n-on-p "edgeless" planar pixel sensors being fabricated at
FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the
High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A
characterizing feature of the devices is the reduced dead area at the edge,
achieved by adopting the "active edge" technology, based on a deep etched
trench, suitably doped to make an ohmic contact to the substrate. The project
is presented, along with the active edge process, the sensor design for this
first n-on-p production and a selection of simulation results, including the
expected charge collection efficiency after radiation fluence of comparable to those expected at HL-LHC (about
ten years of running, with an integrated luminosity of 3000 fb) for the
outer pixel layers. We show that, after irradiation and at a bias voltage of
500 V, more than 50% of the signal should be collected in the edge region; this
confirms the validity of the active edge approach.Comment: 20 pages, 9 figures, submitted to Nucl. Instr. and Meth.
Scaling of variables and the relation between noncommutative parameters in Noncommutative Quantum Mechanics
We consider Noncommutative Quantum Mechanics with phase space
noncommutativity. In particular, we show that a scaling of variables leaves the
noncommutative algebra invariant, so that only the self-consistent effective
parameters of the model are physically relevant. We also discuss the recently
proposed relation of direct proportionality between the noncommutative
parameters, showing that it has a limited applicability.Comment: Revtex4, 4 pages; version to match the published on
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