10,596 research outputs found
Coulomb blockade in a Si channel gated by an Al single-electron transistor
We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a
narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET).
Near the MOSFET channel conductance threshold, we observe oscillations in the
conductance associated with Coulomb blockade in the channel, revealing the
formation of a Si single-electron transistor. Abrupt steps present in sweeps of
the Al transistor conductance versus gate voltage are correlated with
single-electron charging events in the Si transistor, and vice versa. Analysis
of these correlations using a simple electrostatic model demonstrates that the
two single-electron transistor islands are closely aligned, with an
inter-island capacitance approximately equal to 1/3 of the total capacitance of
the Si transistor island, indicating that the Si transistor is strongly coupled
to the Al transistor.Comment: 3 pages, 4 figures, 1 table; typos corrected, minor clarifications
added; published in AP
X-ray and low energy gamma-ray observations of the 16 February 1984 solar flare
The February 16, 1984 (0900 UT) solar flare was very energetic and produced a variety of emissions. The X-ray and gamma ray continuum measurement, made aboard the International Cometary Explorer (ICE) and the Pioneer Venus Orbiter (PVO), are briefly described
InN dielectric function from the midinfrared to the visible range
The dispersion of the dielectric function for wurtzite InN is analytically
evaluated in the region near the fundamental energy gap. The real part of the
dielectric function has a logarithmic singularity at the absorption edge. This
results in the large contribution into the optical dielectric constant. For
samples with degenerate carriers, the real part of the dielectric function is
divergent at the absorption edge. The divergence is smeared with temperatures
or relaxation rate. The imaginary part of the dielectric function has a plateau
far away from the absorption onset.Comment: 5 pages, 2 figure
High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces
We have fabricated and characterized a field-effect transistor in which an
electric field is applied through an encapsulated vacuum cavity and induces a
two-dimensional electron system on a hydrogen-passivated Si(111) surface. This
vacuum cavity preserves the ambient sensitive surface and is created via room
temperature contact bonding of two Si substrates. Hall measurements are made on
the H-Si(111) surface prepared in aqueous ammonium fluoride solution. We obtain
electron densities up to cm and peak mobilities of
cm/V s at 4.2 K.Comment: to appear in Applied Physics Letter
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