Atomic hydrogen cleaning of GaSb(001) surfaces

We show that the (001) surface of GaSb can be cleaned efficiently by exposure to atomic hydrogen at substrate temperatures in the range 400–470 °C. This treatment removes carbon and oxygen contamination, leaving a clean, ordered surface with a symmetric (1 × 3) reconstruction after a total H2 dose of approximately 150 kL. An ordered but partially oxidized surface is generated during cleaning, and the removal of this residual oxide is the most difficult part of the process. Auger electron spectroscopy and low energy electron diffraction were used to monitor the chemical cleanliness and the ordering of the surface during the cleaning process, whereas high resolution electron energy loss spectroscopy was used to probe the electronic structure in the near-surface region. The results obtained indicates that this cleaning procedure leaves no residual electronic damage in the near-surface region of the Te-doped (n ~ 5 × 1017 cm – 3) samples of GaSb(001) studied

Macroinvertebrate Populations In The Upper Mississippi River

The macroinvertebrate community of the Mississippi River near Monticell, Minnesota, was examined for 22 months. Quantitative bottom fauna information was obtained by use of concrete block artificial substrate sampling units. Representative organisms were obtained from seven (7) orders, 15 families and 35 genera of benthic macroinvertebrates. All taxa collected displayed definite seasonal trends. The Orders Trichoptera, Diptera, and Ephemeroptera were the most abundant groups collected, Trichoptera (Hydropsyche and Cheumatopsyche) were the dominant members of the benthic population in both numbers and biomass. Midges and blackflies were the dominant Diptera. Pseudocloeon, Stenonema, and Ephemerella were the most frequently collected mayflies

Accumulation layer profiles at InAs polar surfaces

High resolution electron energy loss spectroscopy, dielectric theory simulations, and charge profile calculations have been used to study the accumulation layer and surface plasmon excitations at the In-terminated (001)-(4 × 1) and (111)A-(2 × 2) surfaces of InAs. For the (001) surface, the surface state density is 4.0 ± 2.0 × 1011 cm – 2, while for the (111)A surface it is 7.5 ± 2.0 × 1011 cm – 2, these values being independent of the surface preparation procedure, bulk doping level, and substrate temperature. Changes of the bulk Fermi level with temperature and bulk doping level do, however, alter the position of the surface Fermi level. Ion bombardment and annealing of the surface affect the accumulation layer only through changes in the effective bulk doping level and the bulk momentum scattering rate, with no discernible changes in the surface charge density

Evidence from scanning tunneling microscopy in support of a structural model for the InSb(001)-c(8×2) surface

In this letter we present evidence from scanning tunneling microscopy studies in support of a recently proposed structural model for the indium-terminated c(8×2) surface of InSb(001). This structural model, by Norris and co-workers, is based on a surface x-ray diffraction study [Surf. Sci. 409, 27 (1998)], and represents a significant departure from previously suggested models for the c(8×2) reconstruction on any (001) surface of the common III–V semiconductor materials. Although filled state images of the InSb(001)-c(8×2) surface have previously been published, empty states image of sufficient quality to extract any meaningful information have not previously been reported. The observations are in excellent agreement with the recently proposed model for this surface reconstruction

Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

The composition profile along the [001] growth direction of low-growth-rate InAs–GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra

Surface electronic properties of undoped InAlN alloys

The variation in surface electronic properties of undoped c-plane InxAl1−xN alloys has been investigated across the composition range using a combination of high-resolution x-ray photoemission spectroscopy and single-field Hall effect measurements. For the In-rich alloys, electron accumulation layers, accompanied by a downward band bending, are present at the surface, with a decrease to approximately flatband conditions with increasing Al composition. However, for the Al-rich alloys, the undoped samples were found to be insulating with approximate midgap pinning of the surface Fermi level observed

The 2010 M 87 VHE flare and its origin: the multi-wavelength picture

The giant radio galaxy M 87, with its proximity (16 Mpc) and its very massive black hole ((3 - 6) \times 10^9 M_solar), provides a unique laboratory to investigate very high energy (E>100 GeV; VHE) gamma-ray emission from active galactic nuclei and, thereby, probe particle acceleration to relativistic energies near supermassive black holes (SMBH) and in relativistic jets. M 87 has been established as a VHE gamma-ray emitter since 2005. The VHE gamma-ray emission displays strong variability on timescales as short as a day. In 2008, a rise in the 43 GHz Very Long Baseline Array (VLBA) radio emission of the innermost region (core; extension of < 100 Rs ; Schwarzschild radii) was found to coincide with a flaring activity at VHE. This had been interpreted as a strong indication that the VHE emission is produced in the direct vicinity of the SMBH. In 2010 a flare at VHE was again detected triggering further multi-wavelength (MWL) observations with the VLBA, Chandra, and other instruments. At the same time, M 87 was also observed with the Fermi-LAT telescope at MeV/GeV energies, the European VLBI Network (EVN), and the Liverpool Telescope (LT). Here, preliminary results from the 2010 campaign will be reported.Comment: 6 pages, 2 figures; Procceedings of the workshop "High Energy Phenomena in Relativistic Outflows III" (HEPRO III), Barcelona, June 27 - July 1, 201