X-Ray Diffractometry of Thin Layers - Possibilities and Problems

Efficieney of two deconvolution methods used in X-ray powder diffraction analysis is compared for thin films of Pd and Pt. The first method is the classical Stokes method and the second one is method of indirect deconvolution. But calculated integral breadth of Gauss and Cauchy components of Voigt function which describe the physical broadening are different. The analysis of the all found pheromones show that the method of indirect deconvolution gives more accurate results

Lattice and Micro-Strains in Polycrystalline Silicon Films Deposited on Ceramic Substrates

X-ray diffraction analysis indicated that the all silicon films are polycrystalline. The preferred orientation of silicon films deposited on SiAlON is almost i [110] direction perpendicular to substrate, whereas the preferred orientation of the silicon films deposited on mullite and alumina is in [111] direction. The crystalline sizes reach from several hundreds of nanometers in Si films on alumin a to several micrometers in Si films on mullite. The crystallite sizes SiAlON in Si films on depending on deposition temperature and crystallographic orientation. The lattice stress decreasing with increasing deposition deposition temperature was observed in Si films on SIAlON, whereas the compressive lattice stress was observed in Si films deposited on mullite and alumina substrates. The probability of stacking faults of 0, 010 was observed only in direction [111] in Si film on alumina deposited at 1100°C.<br /

Voigt Size-Strain Broadening Of Pd Thin Films

Pd thin films were deposited onto Si (100) and glass/Pd/etching substrates by means of r.f. reactive sputtering under the same sputtering condition in order to appreciate the influence of substrate structure. The aim of this study was to appreciate the main X-ray diffraction line profile characteristic by the approximation method. As an approximation function was used the Voigt profile which was calculated by convolution of Gaussian and Cauchy profiles. As an instrumental standart was used ceramic Al2O3 from Nist. Results of size-strain analysis was obtained according to Langford method for one diffraction line and method suggested by Balzar and Ledbetter for two orders of the same diffraction line

Lattce and micro-strains in polycrystalline silicon films deposited on ceramic substates

X-ray diffraction analysis indicated that the all silicon films are polycrystalline. The preferred orientation of silicon films deposited on SiAlON is almost i [110] direction perpendicular to substrate, whereas the preferred orientation of the silicon films deposited on mullite and alumina is in [111] direction. The crystalline sizes reach from several hundreds of nanometers in Si films on alumin a to several micrometers in Si films on mullite. The crystallite sizes SiAlON in Si films on depending on deposition temperature and crystallographic orientation. The lattice stress decreasing with increasing deposition deposition temperature was observed in Si films on SIAlON, whereas the compressive lattice stress was observed in Si films deposited on mullite and alumina substrates. The probability of stacking faults of 0, 010 was observed only in direction [111] in Si film on alumina deposited at 1100°C.<br /