Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers

International audienceQuantum dot (QD) lasers exhibit many interesting and useful properties such as low threshold current, temperature insensitivity or chirpless behavior. In order to reach the standards of long-haul optical transmissions, 1.55 μm InAs QD lasers on InP substrate have been developed. Based on time resolved photoluminescence (PL) measurements, carrier dynamics behavior is at first investigated. Electroluminescence (EL) results are then shown at room temperature exhibiting a laser emission centered at 1.61 μm associated to a threshold current density as low as 820 A/cm2 for a six InAs QD stacked layers. Finally, a rate equation model based on the reservoir theory is used to model both time-resolved photoluminescence (TRPL) and electroluminescence results. It is shown that carrier dynamic calculations are in a good agreement with measurements since the saturation effect occurring at high injected power is clearly predicted

Lasers à boîtes quantiques InAs/InP émettant à 1.55 micromètre pour les télécommunications optiques

RENNES-INSA (352382210) / SudocSudocFranceF

Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates

International audienceWe present the control of the emission wavelength of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates by gas source molecular beam epitaxy. By growing the capping layer in two steps, the control of the dot height and thus of the emission wavelength is achieved. The dot height is tuned using As/P exchange during a growth interrupt. We have studied the changes induced by the nature of the overpressure (As, P, As and P) during the growth interrupt. Photoluminescence spectra at room temperature show the effects of the different growth parameters on the peak energy and width

Reciprocal space description of the electronic coupling between a wetting layer and a QD superlattice plane

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Theoretical Description Of The Electronic Coupling Between A Wetting Layer And A QD Superlattice Plane

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Etude du gain d'un milieu amplificateur à boîtes quantiques

session III « Lasers et amplificateurs à semi-conducteurs » [306], http://www.comelec.enst.fr/jnog2004/papers/306_Moreau.pdfNational audienceCette communication présente le principe et les résultats d'une étude expérimentale réalisée grâce à un pompage optique. Nous avons mesuré un gain maximum de 8,5 dBm/mm pour une largeur spectrale de 150 nm (largeur à mi-hauteur) sur une structure amplificatrice à base d'îlots quantiques. Celle-ci avait préalablement permis d'observer une oscillation laser à 1,52 µm à température ambiante

Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots

International audienc