Investigation of Dislocations in GaAs Using Cathodoluminescence in the Scanning Electron Microscope

Electrically active dislocations in Si-doped {100} GaAs substrates were observed using the cathodoluminescence (CL) technique in the scanning electron microscope (SEM). CL contrast profiles were experimentally obtained from the dislocations at different beam energies. Based on the CL model for localized defects in semiconductors developed earlier by Pey, the depths of the dislocations were found by locating the beam energy at which maximum CL contrast occurred. A preferential etching technique for {100} GaAs was employed to reveal the dislocations and to measure their depths. The etched depths obtained were compared to the predicted results from the theoretical model developed. The discrepancies in the results were attributed to a Cottrell atmosphere of point defects around the dislocation core

Error Voltage Components in Quantitative Voltage Contrast Measurement Systems

This paper presents the results of computer simulation studies into the respective contributions of the potential barrier, the off-normal incidence injection of secondary electrons (SEs) into the retarding field and analyser geometry on Types I and II local field error voltages for a practical 20 mm wide planar retarding field energy analyser. Results show that the error voltage component due to the off-normal incidence injection effect of SEs into the retarding field dominates the Type I local field error. For type II LFE, the error voltage component due to analyser geometry effect is the higher contributing factor. The presence of a neighbouring electrode voltage tends to draw SEs away from the central axis of the energy analyser, thus causing the electron trajectories to be more sensitive to the influence of the analyser geometry

Cathodoluminescence Contrast of Localized Defects Part II. Defect Investigation

Cathodoluminescence contrast from defects with different geometrical and electronic properties have been studied using the numerical model developed in Part I. The contrast of a localized subsurface defect exhibits a maxima at a specific beam energy Emax which corresponds to the depth of the defect. The contrast of a dis-location which intersects the top surface perpendicularly is a decreasing function of beam energy. The differences in the image profiles of the two different kinds of defects allow the two types of imperfections to be distinguished. In addition, the resolution of a subsurface defect at beam energies lower than Emax is only a function of defect size and is insensitive to the defect strength. The defect depth, size and strength can therefore be extracted sequentially. The extension of the model to the investigation of complex or multiple defects such as dot and halo contrast is also illustrated

Cathodoluminescence Contrast of Localized Defects Part I. Numerical Model for Simulation

A three-dimensional model has been developed for cathodoluminescence contrast of localized defects in semiconductors. The numerical model incorporates electron-solid interaction effects, charge transport phenomena and optical losses. Electron-solid interaction is modelled by a Monte Carlo method. Three-dimensional continuity equation and derivative boundary conditions are discretized by a central-difference quotients scheme. Localized defects are represented by regions of enhanced non-radiative recombination. The discretized linear difference equations of the boundary value problem are solved by the successive-over-relaxation method. A method for avoiding the divergence problem during the successive-over-relaxation calculation is illustrated. The solutions of the model are compared with the analytical results of several established models

A Simulation Model for Electron Irradiation Induced Specimen Charging in a Scanning Electron Microscope

A numerical model has been formulated to simulate the dynamics of specimen charging in a scanning electron microscope. In this model, the electric field due to imposed boundary conditions and fixed charges is solved by the finite element method. The empirical electron yield data are stored in Universal Yield Curves (UYC) . These UYCs control the generation of secondary and backscattered electrons from various materials. The electrons emitted from electron-solid interactions are tracked using a leapfrog integration scheme. Excess charges generated on the surface of electrically floating solids are assigned to numerical grids using a linear charge redistribution scheme. The validity of the simulation model was verified by measurements in a special setup which consisted of several isolated electrodes in the SEM chamber. Excess currents generated inside each electrode due to electron irradiation were measured simultaneously. Measurements and simulation results are in broad agreement and show that electrically floating electrodes, not directly irradiated by the primary beam, can charge-up if they are irradiated by secondary electrons and backscattered electrons emitted from a nearby electrode. The polarity of charge generation on the electrically floating solid depends on its own material property, and also strongly on the potential distribution in the space surrounding the floating electrode

An Energy Dependent Model for Type I Magnetic Contrast in the Scanning Electron Microscope

The modelling of the magnetic contrast phenomenon in the scanning electron microscope (SEM) is important in understanding the physics of the contrast mechanism and the associated signal detection. In this paper, we report an improved analytical model for Type I magnetic contrast calculations using an approximate form of the Chung and Everhart secondary electron (SE) energy distribution. Previous studies have neglected this factor by assuming a mono-energetic model in order to simplify the calculations. This new model can be used to study different material specimens by appropriate choice of the work function and field-distance integral. The effect of energy filtering on the Type I magnetic contrast and quality factor can also be studied with the improved model by substituting the low and high energy limits of the filtered SE distribution into the closed-form analytical expressions obtained. Results of the above-mentioned effects and the effect of collector aperturing are reported in this paper using the new improved energy dependent model

English Intermediate-Task Training Improves Zero-Shot Cross-Lingual Transfer Too

Intermediate-task training---fine-tuning a pretrained model on an intermediate task before fine-tuning again on the target task---often improves model performance substantially on language understanding tasks in monolingual English settings. We investigate whether English intermediate-task training is still helpful on non-English target tasks. Using nine intermediate language-understanding tasks, we evaluate intermediate-task transfer in a zero-shot cross-lingual setting on the XTREME benchmark. We see large improvements from intermediate training on the BUCC and Tatoeba sentence retrieval tasks and moderate improvements on question-answering target tasks. MNLI, SQuAD and HellaSwag achieve the best overall results as intermediate tasks, while multi-task intermediate offers small additional improvements. Using our best intermediate-task models for each target task, we obtain a 5.4 point improvement over XLM-R Large on the XTREME benchmark, setting the state of the art as of June 2020. We also investigate continuing multilingual MLM during intermediate-task training and using machine-translated intermediate-task data, but neither consistently outperforms simply performing English intermediate-task training

A versatile all-optical parity-time signal processing device using a Bragg grating induced using positive and negative Kerr-nonlinearity

The properties of gratings with Kerr nonlinearity and PT symmetry are investigated in this paper. The impact of the gain and loss saturation on the response of the grating is analysed for different input intensities and gain/loss parameters. Potential applications of these gratings as switches, logic gates and amplifiers are also shown