Polarized emission from hexagonal-silicon-germanium nanowires

We present polarized emission from single hexagonal silicon-germanium (hex-SiGe) nanowires. To understand the nature of the band-to-band emission of hex-SiGe, we have performed photoluminescence spectroscopy to investigate the polarization properties of hex-SiGe core-shell nanowires. We observe a degree of polarization of 0.2 to 0.32 perpendicular to the nanowire c-axis. Finite-difference time-domain simulations were performed to investigate the influence of the dielectric contrast of nanowire structures. We find that the dielectric contrast significantly reduces the observable degree of polarization. Taking into account this reduction, the experimental data are in good agreement with polarized dipole emission perpendicular to the c-axis, as expected for the fundamental band-to-band transition, the lowest energy direct band-to-band transition in the hex-SiGe band structure.</p

Direct bandgap quantum wells in hexagonal Silicon Germanium

Silicon is indisputably the most advanced material for scalable electronics, but it is a poor choice as a light source for photonic applications, due to its indirect band gap. The recently developed hexagonal Si1−xGex semiconductor features a direct bandgap at least for x &gt; 0.65, and the realization of quantum heterostructures would unlock new opportunities for advanced optoelectronic devices based on the SiGe system. Here, we demonstrate the synthesis and characterization of direct bandgap quantum wells realized in the hexagonal Si1−xGex system. Photoluminescence experiments on hex-Ge/Si0.2Ge0.8 quantum wells demonstrate quantum confinement in the hex-Ge segment with type-I band alignment, showing light emission up to room temperature. Moreover, the tuning range of the quantum well emission energy can be extended using hexagonal Si1−xGex/Si1−yGey quantum wells with additional Si in the well. These experimental findings are supported with ab initio bandstructure calculations. A direct bandgap with type-I band alignment is pivotal for the development of novel low-dimensional light emitting devices based on hexagonal Si1−xGex alloys, which have been out of reach for this material system until now.</p

Proof of Stimulated Emission in Silicon-Germanium

We have investigated a hexagonal Silicon-Germanium NW on top of a microstadium resonator using time resolved photoluminescence. Clear indications of fast stimulated emission from hex-SiGe are observed, showing that we approach lasing

Growth - related formation mechanism of I3 - type basal stacking fault in epitaxially grown hexagonal Ge - 2H

The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic functionalities of group-IV semiconductors (Ge and SiGe). The controlled synthesis of such hexagonal(2H)Gephaseis a challenge that can be overcome by usingwurtziteGaAsnanowires as a template. However, depending on growth conditions, unusual basal stacking faults (BSFs) of I3-type are formed in themetastable2H structure. The growth of such core/shell heterostructures has been observed in situ and in real-time by means of environmental transmission electron microscopy using chemical vapor deposition. The observations provide direct evidence of a step-flow growth of the Ge-2H epi layer and reveal the growth-related formation of I3-BSF during unstable growth. Their formation conditions are dynamically investigated. Through these in situ observations we can propose a scenario for the nucleation of I3-type BSFs that is likely valid for any metastable hexagonal 2H or wurtzite structures grown on m-plane substrates. Conditions are identified to avoid their formation for the perfect crystalline synthesis of SiGe-2H. This dataset contains all the original scanning and transmission electron microscopy images and videos, and the atomic models that our results and understanding of the I3 defects are based on

Polarized Emission from hexagonal-Silicon Germanium Nanowires

This dataset contains the polarization dependent photoluminescence intensity measurements on hexagonal-silicon germanium nanowires. This data confirms the selection rules of the fundemental direct bandgap transition of the material. The data is zipped and contains a README which describes the storage of the data inside the folder

Stoma-free survival after anastomotic leak following rectal cancer resection: worldwide cohort of 2470 patients

Background: The optimal treatment of anastomotic leak after rectal cancer resection is unclear. This worldwide cohort study aimed to provide an overview of four treatment strategies applied. Methods: Patients from 216 centres and 45 countries with anastomotic leak after rectal cancer resection between 2014 and 2018 were included. Treatment was categorized as salvage surgery, faecal diversion with passive or active (vacuum) drainage, and no primary/secondary faecal diversion. The primary outcome was 1-year stoma-free survival. In addition, passive and active drainage were compared using propensity score matching (2: 1). Results: Of 2470 evaluable patients, 388 (16.0 per cent) underwent salvage surgery, 1524 (62.0 per cent) passive drainage, 278 (11.0 per cent) active drainage, and 280 (11.0 per cent) had no faecal diversion. One-year stoma-free survival rates were 13.7, 48.3, 48.2, and 65.4 per cent respectively. Propensity score matching resulted in 556 patients with passive and 278 with active drainage. There was no statistically significant difference between these groups in 1-year stoma-free survival (OR 0.95, 95 per cent c.i. 0.66 to 1.33), with a risk difference of -1.1 (95 per cent c.i. -9.0 to 7.0) per cent. After active drainage, more patients required secondary salvage surgery (OR 2.32, 1.49 to 3.59), prolonged hospital admission (an additional 6 (95 per cent c.i. 2 to 10) days), and ICU admission (OR 1.41, 1.02 to 1.94). Mean duration of leak healing did not differ significantly (an additional 12 (-28 to 52) days). Conclusion: Primary salvage surgery or omission of faecal diversion likely correspond to the most severe and least severe leaks respectively. In patients with diverted leaks, stoma-free survival did not differ statistically between passive and active drainage, although the increased risk of secondary salvage surgery and ICU admission suggests residual confounding