16 research outputs found
Carbon clusters near the crossover to fullerene stability
The thermodynamic stability of structural isomers of ,
, and , including
fullerenes, is studied using density functional and quantum Monte Carlo
methods. The energetic ordering of the different isomers depends sensitively on
the treatment of electron correlation. Fixed-node diffusion quantum Monte Carlo
calculations predict that a isomer is the smallest stable
graphitic fragment and that the smallest stable fullerenes are the
and clusters with and
symmetry, respectively. These results support proposals that a
solid could be synthesized by cluster deposition.Comment: 4 pages, includes 4 figures. For additional graphics, online paper
and related information see http://www.tcm.phy.cam.ac.uk/~prck
Optimization of inhomogeneous electron correlation factors in periodic solids
A method is presented for the optimization of one-body and inhomogeneous
two-body terms in correlated electronic wave functions of Jastrow-Slater type.
The most general form of inhomogeneous correlation term which is compatible
with crystal symmetry is used and the energy is minimized with respect to all
parameters using a rapidly convergent iterative approach, based on Monte Carlo
sampling of the energy and fitting energy fluctuations. The energy minimization
is performed exactly within statistical sampling error for the energy
derivatives and the resulting one- and two-body terms of the wave function are
found to be well-determined. The largest calculations performed require the
optimization of over 3000 parameters. The inhomogeneous two-electron
correlation terms are calculated for diamond and rhombohedral graphite. The
optimal terms in diamond are found to be approximately homogeneous and
isotropic over all ranges of electron separation, but exhibit some
inhomogeneity at short- and intermediate-range, whereas those in graphite are
found to be homogeneous at short-range, but inhomogeneous and anisotropic at
intermediate- and long-range electron separation.Comment: 23 pages, 15 figures, 1 table, REVTeX4, submitted to PR
Diffusion quantum Monte Carlo study of three-dimensional Wigner crystals
We report diffusion quantum Monte Carlo calculations of three-dimensional
Wigner crystals in the density range r_s=100-150. We have tested different
types of orbital for use in the approximate wave functions but none improve
upon the simple Gaussian form. The Gaussian exponents are optimized by directly
minimizing the diffusion quantum Monte Carlo energy. We have carefully
investigated and sought to minimize the potential biases in our Monte Carlo
results. We conclude that the uniform electron gas undergoes a transition from
a ferromagnetic fluid to a body-centered-cubic Wigner crystal at r_s=106+/-1.
The diffusion quantum Monte Carlo results are compared with those from
Hartree-Fock and Hartree theory in order to understand the role played by
exchange and correlation in Wigner crystals. We also study "floating" Wigner
crystals and give results for their pair-correlation functions
The 3-Band Hubbard-Model versus the 1-Band Model for the high-Tc Cuprates: Pairing Dynamics, Superconductivity and the Ground-State Phase Diagram
One central challenge in high- superconductivity (SC) is to derive a
detailed understanding for the specific role of the - and
- orbital degrees of freedom. In most theoretical studies an
effective one-band Hubbard (1BH) or t-J model has been used. Here, the physics
is that of doping into a Mott-insulator, whereas the actual high- cuprates
are doped charge-transfer insulators. To shed light on the related question,
where the material-dependent physics enters, we compare the competing magnetic
and superconducting phases in the ground state, the single- and two-particle
excitations and, in particular, the pairing interaction and its dynamics in the
three-band Hubbard (3BH) and 1BH-models. Using a cluster embedding scheme, i.e.
the variational cluster approach (VCA), we find which frequencies are relevant
for pairing in the two models as a function of interaction strength and doping:
in the 3BH-models the interaction in the low- to optimal-doping regime is
dominated by retarded pairing due to low-energy spin fluctuations with
surprisingly little influence of inter-band (p-d charge) fluctuations. On the
other hand, in the 1BH-model, in addition a part comes from "high-energy"
excited states (Hubbard band), which may be identified with a non-retarded
contribution. We find these differences between a charge-transfer and a Mott
insulator to be renormalized away for the ground-state phase diagram of the
3BH- and 1BH-models, which are in close overall agreement, i.e. are
"universal". On the other hand, we expect the differences - and thus, the
material dependence to show up in the "non-universal" finite-T phase diagram
(-values).Comment: 17 pages, 9 figure
Polaronic Transport and Current Blockades in Epitaxial Silicide Nanowires and Nanowire Arrays
Crystalline micrometer-long YSi2 nanowires with cross sections as small as 1×0.5 nm2 can be grown on the Si(001) surface. Their extreme aspect ratios make electron conduction within these nanowires almost ideally one-dimensional, while their compatibility with the silicon platform suggests application as metallic interconnect in Si-based nano-electronic devices. Here we combine bottom-up epitaxial wire synthesis in ultrahigh vacuum with top-down miniaturization of the electrical measurement probes to elucidate the electronic conduction mechanism of both individual wires and arrays of nanowires. Temperature-dependent transport through individual nanowires is indicative of thermally-assisted tunneling of small polarons between atomic-scale defect centers. In-depth analysis of complex wire networks emphasize significant electronic crosstalk between the nanowires, due to the long-range Coulomb fields associated with polaronic charge fluctuations. This work establishes a semi-quantitative correlation between the density and distributions of atomic-scale defects and resulting current-voltage characteristics of nanoscale network devices
Doped NiO: The mottness of a charge transfer insulator
The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the evolution of NiO under hole and electron doping at low doping levels such that the system remains insulating using high-quality thin film and a wide range of experimental and theoretical methods. The evolution is in both cases very smooth with dopant concentration. The band gap is asymmetric under electron and hole doping, consistent with a charge-transfer insulator picture, and is reduced faster under hole doping than under electron doping. For both electron and hole doping, occupied states are introduced at the top of the valence band. The formation of deep donor levels under electron doping and the inability to pin otherwise empty states near the conduction-band edge are indicative that local electron addition and removal energies are dominated by a Mott-like Hubbard U interaction even though the global band gap is predominantly a charge-transfer-type gap. ?? 2020 American Physical Society. ??2020 American Physical Society
