Visibility diagrams and experimental stripe structure in the quantum Hall effect

We analyze various properties of the visibility diagrams that can be used in the context of modular symmetries and confront them to some recent experimental developments in the Quantum Hall Effect. We show that a suitable physical interpretation of the visibility diagrams which permits one to describe successfully the observed architecture of the Quantum Hall states gives rise naturally to a stripe structure reproducing some of the experimental features that have been observed in the study of the quantum fluctuations of the Hall conductance. Furthermore, we exhibit new properties of the visibility diagrams stemming from the structure of subgroups of the full modular group.Comment: 8 pages in plain TeX, 7 figures in a single postscript fil

Current carrying capacity of carbon nanotubes

The current carrying capacity of ballistic electrons in carbon nanotubes that are coupled to ideal contacts is analyzed. At small applied voltages, where electrons are injected only into crossing subbands, the differential conductance is $4e^2/h$. At applied voltages larger than $\Delta E_{NC}/2e$ ($\Delta E_{NC}$ is the energy level spacing of first non crossing subbands), electrons are injected into non crossing subbands. The contribution of these electrons to current is determined by the competing processes of Bragg reflection and Zener type inter subband tunneling. In small diameter nanotubes, Bragg reflection dominates, and the maximum differential conductance is comparable to $4e^2/h$. Inter subband Zener tunneling can be non negligible as the nanotube diameter increases because $\Delta E_{NC}$ is inversely proportional to the diameter. As a result, with increasing nanotube diameter, the differential conductance becomes larger than $4e^2/h$, though not comparable to the large number of subbands into which electrons are injected from the contacts. These results may be relevant to recent experiments in large diameter multi-wall nanotubes that observed conductances larger than $4e^2/h$.Comment: 12 pages, 4 figure

Two-terminal conductance fluctuations in the integer quantum Hall regime

Motivated by recent experiments on the conductance fluctuations in mesoscopic integr quantum Hall systems, we consider a model in which the Coulomb interactions are incorporated into the picture of edge-state transport through a single saddle-point. The occupancies of `classical' localised states in the two-dimensional electron system change due to the interactions between electrons when the gate voltage on top of the device is varied. The electrostatic potential between the localised states and the saddle-point causes fluctuations of the saddle-point potential and thus fluctuations of the transmission probability of edge states. This simple model is studied numerically and compared with the observation.Comment: 6 pages with 3 figures. To be published in Physical Review

Charge Pumping in Carbon Nanotubes

We demonstrate charge pumping in semiconducting carbon nanotubes by a traveling potential wave. From the observation of pumping in the nanotube insulating state we deduce that transport occurs by packets of charge being carried along by the wave. By tuning the potential of a side gate, transport of either electron or hole packets can be realized. Prospects for the realization of nanotube based single-electron pumps are discussed

Coherent Single Charge Transport in Molecular-Scale Silicon Nanowire Transistors

We report low-temperature electrical transport studies of molecule-scale silicon nanowires. Individual nanowires exhibit well-defined Coulomb blockade oscillations characteristic of charge addition to a single nanostructure with length scales up to at least 400 nm. Further studies demonstrate coherent charge transport through discrete single particle quantum levels extending the whole device, and show that the ground state spin configuration follows the Lieb-Mattis theorem. In addition, depletion of the nanowires suggests that phase coherent single-dot characteristics are accessible in a regime where correlations are strong.Comment: 4 pages and 4 figure

Finite-temperature Fermi-edge singularity in tunneling studied using random telegraph signals

We show that random telegraph signals in metal-oxide-silicon transistors at millikelvin temperatures provide a powerful means of investigating tunneling between a two-dimensional electron gas and a single defect state. The tunneling rate shows a peak when the defect level lines up with the Fermi energy, in excellent agreement with theory of the Fermi-edge singularity at finite temperature. This theory also indicates that defect levels are the origin of the dissipative two-state systems observed previously in similar devices.Comment: 5 pages, REVTEX, 3 postscript figures included with epsfi