RETRATO SIN IDENTIFICAR [Material gráfico]

Copia digital. Madrid : Ministerio de Educación, Cultura y Deporte, 201

Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 µm

International audienceWe report on low-threshold high-power quantum well diode lasers emitting near 2.3 μm based on the GaInAsSb/AlGaAsSb system. The threshold current density per quantum well is as low as 63 A cm-2. A maximum output power of 540 mW at 293K in the continuous wave regime has been achieved

Asymmetry effects driving secondary instabilities in two-dimensional collisionless magnetic reconnection

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Trace gas detection with antimonide-based quantum-well diode lasers

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GaSb solar cells structures under high solar concentration

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CHARACTERIZATION OF GaSb SOLAR CELLS STRUCTURES UNDER HIGH SOLAR CONCENTRATIONS

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Low-Threshold GaInAsSb/AlGaAsSb Laser Diodes Emitting at 2.3 µm

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Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm

International audienceDiode lasers emitting at 2.26 μm, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm2 for a 2-mm-long cavity. Output power up to 700 mW (≈550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 μm×1 mm lasers. These devices have been coated with an antireflection on the output facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element

Semiconductor mid-infrared lasers working at high temperature Application to gas analysis

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AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3µm

International audienceThis paper is dedicated to the study of electrical and optical properties of four different doped 21.5 pairs AlAsSb/GaSb distributed Bragg reflectors lattice-matched to GaSb and designed for the fabrication of electrically pumped VCSELs emitting around 2.3 µm. Three different doping profiles have been carried out: n-bulk doping, n-delta doping and p-bulk doping. An n-type bulk doped Bragg mirror with step composition at GaSb/AlAsSb interfaces was also tested. The n-type bulk doped sample with sharp interfaces exhibited the best electrical properties, a voltage drop per pair of 25 mV and a specific resistance of 1 × 10−4 Ω cm2 at 1 kA cm−2. Moreover, optical losses as low as 5–10 cm−1 have been measured for n-type doped mirrors