CORE
🇺🇦
make metadata, not war
Services
Services overview
Explore all CORE services
Access to raw data
API
Dataset
FastSync
Content discovery
Recommender
Discovery
OAI identifiers
OAI Resolver
Managing content
Dashboard
Bespoke contracts
Consultancy services
Support us
Support us
Membership
Sponsorship
Community governance
Advisory Board
Board of supporters
Research network
About
About us
Our mission
Team
Blog
FAQs
Contact us
Filters
4 research outputs found
Impact of buffer layers on thermal properties of AlGaN/GaN-on-SiC high electron mobility transistors (HEMTs)
Author
Anaya Calvo Julian
Jantz Wolfgang
+8 more
Kuball Martin
Kuzuhara Masaaki
Otoki Yohei
Pomeroy James
Power Maire
Souzis Andrew
Tanaka Takeshi
Wada Jiro
Publication venue
Publication date
15/06/2014
Field of study
Get PDF
Explore Bristol Research
Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs
Author
Jantz Wolfgang
Kuball Martin H H
+7 more
Kuzuhara Masaaki
Otoki Yohei
Pomeroy James W
Power Maire
Souzis Andrew
Tanaka Takeshi
Wada Jiro
Publication venue
'Wiley'
Publication date
23/02/2015
Field of study
Get PDF
Crossref
Explore Bristol Research
Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs: Effect of carbon and iron doping
Author
Jantz Wolfgang
Kuball Martin
+7 more
Kuzuhara Masaaki
Otoki Yohei
Pomeroy James
Power Maire
Souzis Andrew
Tanaka Takeshi
Wada Jiro
Publication venue
Publication date
01/05/2015
Field of study
No full text
Explore Bristol Research
A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation
Author
Arehart
Armstrong
+22 more
Binari
Blood
Fang
Hamilton
Honda
Ikeda
Kenji Shiojima
Kikkawa
Kikuta
Klein
Klein
Mattila
Poblenz
Seager
Seager
SZe
Takeshi Tanaka
Tanaka
Wickenden
Wright
Yohei Otoki
Yutaka Tokuda
Publication venue
'Elsevier BV'
Publication date
Field of study
No full text
Crossref