Transition temperature of ferromagnetic semiconductors: a dynamical mean field study

We formulate a theory of doped magnetic semiconductors such as Ga$_{1-x}$Mn$_x$As which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature $T_c$ as a function of magnetic coupling strength $J$ and carrier density $n$. We find that $T_c$ is determined by a subtle interplay between carrier density and magnetic coupling.Comment: 4 pages, 4 figure

An evolutionary model with Turing machines

The development of a large non-coding fraction in eukaryotic DNA and the phenomenon of the code-bloat in the field of evolutionary computations show a striking similarity. This seems to suggest that (in the presence of mechanisms of code growth) the evolution of a complex code can't be attained without maintaining a large inactive fraction. To test this hypothesis we performed computer simulations of an evolutionary toy model for Turing machines, studying the relations among fitness and coding/non-coding ratio while varying mutation and code growth rates. The results suggest that, in our model, having a large reservoir of non-coding states constitutes a great (long term) evolutionary advantage.Comment: 16 pages, 7 figure

Ab-initio transport theory for digital ferromagnetic heterostructures

MnAs/GaAs superlattices, made by $\delta$-doping GaAs with Mn, are known as digital ferromagnetic heterostructures. Here we present a theoretical density functional study of the electronic, magnetic and transport properties of such heterostructures. In the absence of intrinsic donors these systems show an half metallic density of states, with an exchange interaction much stronger than that of a random alloy with the same Mn concentration. {\it Ab initio} ballistic transport calculations show that the carriers with energies close to the Fermi energy are strongly confined within a few monolayers around the MnAs plane. This strong confinement is responsible for the large exchange coupling. Therefore the system can be described as a two dimensional half metal with large conductance in the MnAs plane and small conductance in the perpendicular direction

Optical Conductivity of Ferromagnetic Semiconductors

The dynamical mean field method is used to calculate the frequency and temperature dependent conductivity of dilute magnetic semiconductors. Characteristic qualitative features are found distinguishing weak, intermediate, and strong carrier-spin coupling and allowing quantitative determination of important parameters defining the underlying ferromagnetic mechanism

Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells

A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all-semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized {\it p-n} junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.Comment: 4 pages, 3 figure

Domain wall dynamics in a single CrO2_2 grain

Recently we have reported on the magnetization dynamics of a single CrO$_2$ grain studied by micro Hall magnetometry (P. Das \textit{et al.}, Appl. Phys. Lett. \textbf{97} 042507, 2010). For the external magnetic field applied along the grain's easy magnetization direction, the magnetization reversal takes place through a series of Barkhausen jumps. Supported by micromagnetic simulations, the ground state of the grain was found to correspond to a flux closure configuration with a single cross-tie domain wall. Here, we report an analysis of the Barkhausen jumps, which were observed in the hysteresis loops for the external field applied along both the easy and hard magnetization directions. We find that the magnetization reversal takes place through only a few configuration paths in the free-energy landscape, pointing to a high purity of the sample. The distinctly different statistics of the Barkhausen jumps for the two field directions is discussed.Comment: JEMS Conference, to appear in J. Phys. Conf. Se

Magnetization Reversal in Elongated Fe Nanoparticles

Magnetization reversal of individual, isolated high-aspect-ratio Fe nanoparticles with diameters comparable to the magnetic exchange length is studied by high-sensitivity submicron Hall magnetometry. For a Fe nanoparticle with diameter of 5 nm, the magnetization reversal is found to be an incoherent process with localized nucleation assisted by thermal activation, even though the particle has a single-domain static state. For a larger elongated Fe nanoparticle with a diameter greater than 10 nm, the inhomogeneous magnetic structure of the particle plays important role in the reversal process.Comment: 6 pages, 6 figures, to appear in Phys. Rev. B (2005