The 1/f noise in MOSFETs using VHP (vertical high pressure) oxynitride gate insulator was studied. The 1/f noise is degraded by conventional oxynitride gate insulators. It was found that 1/f noise can be improved by using the VHP oxynitride gate insulator

Acker, Bruce

Bloom, John

Evans, Bob

Iwai, Hiroshi

Katsuinata, Yasuhiro

Kimijima, Hideki

Kinugawa, Masaaki

Kwong, Dim-Lee

Mabuchi, Hiroyuki

Momose, Hisayo Sasaki

Morifuji, Eiji

Ohgnro, Tatsnya

Yoshitomi, Takashi

Caltech Authors

Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS