Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS

Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge carrier mobility with a frequency range of operation of reach for chips based on silicon (Si). Keywords: super beta-transistor, heterostructure, gallium arsenide, silicon, reactors electron-cyclotron resonance.</p

Formation of MOS-transistors with isolation of active elements by oxiden porous silicon

The superthin functional layers of MOS-transistors require qualitative isolation of active elements. The new method of formation of epitaksial structures for technology «silicon - on-isolator» is offered on the basis of porous silicon. It will allow to form three kinds of transistors — bipolar, SМОS, DМОS