Construction of controlled-NOT gate based on microwave-activated phase (MAP) gate in two transmon system

We experimentally constructed an all-microwave scheme for the controlled-NOT (cNOT) gate between two superconducting transmon qubits in a three dimensional cavity. Our cNOT gate is based on the microwave-activated phase (MAP) gate, which requires an additional procedure to compensate the accumulated phases during the operation of the MAP gate. We applied Z-axis phase gates using microwave hyperbolic secant pulse on both qubits with adequate rotation angles systematically calibrated by separate measurements.We evaluated the gate performance of the constructed cNOT gate by performing two-qubit quantum process tomography (QPT). Finally, we present the experimental implementation of Deutsch-Jozsa algorithm using the cNOT gate

OF@TEIN: An OpenFlow-enabled SDN Testbed over International SmartX Rack Sites

In this paper, we will discuss our on-going effort for OF@TEIN SDN(Software-Defined Networking) testbed, which currently spans over Korea and fiveSouth-East Asian (SEA) collaborators with internationally deployed OpenFlowenabledSmartX Racks

Demonstrating a superconducting dual-rail cavity qubit with erasure-detected logical measurements

A critical challenge in developing scalable error-corrected quantum systems is the accumulation of errors while performing operations and measurements. One promising approach is to design a system where errors can be detected and converted into erasures. A recent proposal aims to do this using a dual-rail encoding with superconducting cavities. In this work, we implement such a dual-rail cavity qubit and use it to demonstrate a projective logical measurement with erasure detection. We measure logical state preparation and measurement errors at the $0.01\%$-level and detect over $99\%$ of cavity decay events as erasures. We use the precision of this new measurement protocol to distinguish different types of errors in this system, finding that while decay errors occur with probability $\sim 0.2\%$ per microsecond, phase errors occur 6 times less frequently and bit flips occur at least 170 times less frequently. These findings represent the first confirmation of the expected error hierarchy necessary to concatenate dual-rail erasure qubits into a highly efficient erasure code

Construction of controlled-NOT gate based on microwave-activated phase (MAP) gate in two transmon system

Abstract We experimentally constructed an all-microwave scheme for the controlled-NOT (cNOT) gate between two superconducting transmon qubits in a three dimensional cavity. Our cNOT gate is based on the microwave-activated phase (MAP) gate, which requires an additional procedure to compensate the accumulated phases during the operation of the MAP gate. We applied Z-axis phase gates using microwave hyperbolic secant pulse on both qubits with adequate rotation angles systematically calibrated by separate measurements. We evaluated the gate performance of the constructed cNOT gate by performing two-qubit quantum process tomography (QPT). Finally, we present the experimental implementation of the Deutsch-Jozsa algorithm using the cNOT gate

Ion Migration Induced Unusual Charge Transport in Tin Halide Perovskites

Metal halide perovskites are considered next-generation semiconductors for various optoelectronic devices owing to their lowcost processability and superior optoelectronic properties. However, the performance and reliability of perovskite-based devices depend on electric-field-driven ion migration, whose mechanism remains unclear. Tin (Sn2+)-based perovskites are attracting particular interest owing to their unique charge-transport properties and eco-friendly characteristics. Here, we explore the effect of ion migration on the chargetransport properties of the Sn2+ perovskite using the transistor as the test platform. To supply mobile ions, we added copper iodide to the Sn2+ perovskite film. The ion migration and accumulation-induced electrochemical doping of the perovskite channel resulted in abnormal transitions in the electrical characteristics with the abnormally high transient field-effect mobility. We expect this study provides a hint for the decipherment of ion migration effect on the charge-transport properties of Sn2+ perovskites and the design of novel perovskite-based electronics.11Nsciescopu