28 research outputs found
Crystal growth and structural analysis of perovskite chalcogenide BaZrS and Ruddlesden-Popper phase BaZrS
Perovskite chalcogenides are gaining substantial interest as an emerging
class of semiconductors for optoelectronic applications. High quality samples
are of vital importance to examine their inherent physical properties. We
report the successful crystal growth of the model system, BaZrS and its
Ruddlesden-Popper phase BaZrS by flux method. X-ray diffraction
analyses showed space group of with lattice constants of = 7.056(3)
\AA\/, = 9.962(4) \AA\/, = 6.996(3) \AA\/ for BaZrS and
with = 7.071(2) \AA\/, = 7.071(2) \AA\/, = 25.418(5) \AA\/ for
BaZrS. Rocking curves with full-width-at-half-maximum of
0.011 for BaZrS and 0.027 for BaZrS were
observed. Pole figure analysis, scanning transmission electron microscopy
images and electron diffraction patterns also establish high quality of grown
crystals. The octahedra tilting in the corner-sharing octahedra network are
analyzed by extracting the torsion angles.Comment: 4 Figures, 2 Table
Ideal Bandgap in a 2D Ruddlesden-Popper Perovskite Chalcogenide for Single-junction Solar Cells
Transition metal perovskite chalcogenides (TMPCs) are explored as stable,
environmentally friendly semiconductors for solar energy conversion. They can
be viewed as the inorganic alternatives to hybrid halide perovskites, and
chalcogenide counterparts of perovskite oxides with desirable optoelectronic
properties in the visible and infrared part of the electromagnetic spectrum.
Past theoretical studies have predicted large absorption coefficient, desirable
defect characteristics, and bulk photovoltaic effect in TMPCs. Despite recent
progresses in polycrystalline synthesis and measurements of their optical
properties, it is necessary to grow these materials in high crystalline quality
to develop a fundamental understanding of their optical properties and evaluate
their suitability for photovoltaic application. Here, we report the growth of
single crystals of a two-dimensional (2D) perovskite chalcogenide, Ba3Zr2S7,
with a natural superlattice-like structure of alternating double-layer
perovskite blocks and single-layer rock salt structure. The material
demonstrated a bright photoluminescence peak at 1.28 eV with a large external
luminescence efficiency of up to 0.15%. We performed time-resolved
photoluminescence spectroscopy on these crystals and obtained an effective
recombination time of ~65 ns. These results clearly show that 2D
Ruddlesden-Popper phases of perovskite chalcogenides are promising materials to
achieve single-junction solar cells.Comment: 4 Figure
Discovery of highly-polarizable semiconductors BaZrS3 and Ba3Zr2S7
There are few known semiconductors exhibiting both strong optical response
and large dielectric polarizability. Inorganic materials with large dielectric
polarizability tend to be wide-band gap complex oxides. Semiconductors with
strong photoresponse to visible and infrared light tend to be weakly
polarizable. Interesting exceptions to these trends are halide perovskites and
phase-change chalcogenides. Here we introduce complex chalcogenides in the
Ba-Zr-S system in perovskite and Ruddlesden-Popper structures as a new family
of highly polarizable semiconductors. We report the results of impedance
spectroscopy on single crystals that establish BaZrS3 and Ba3Zr2S7 as
semiconductors with low-frequency relative dielectric constant ()
in the range 50 - 100, and band gap in the range 1.3 - 1.8 eV. Our electronic
structure calculations indicate the enhanced dielectric response in perovskite
BaZrS3 versus Ruddlesden-Popper Ba3Zr2S7 is primarily due to enhanced IR
mode-effective charges, and variations in phonon frequencies along ; differences in the Born effective charges and the lattice stiffness
are of secondary importance. This combination of covalent bonding in crystal
structures more common to complex oxides results in a sizable Fr\"ohlich
coupling constant, which suggests that charge carriers are large polarons.Comment: 22 pages, 5 figure
Discovery of highly polarizable semiconductors BaZrS₃ and Ba₃Zr₂S₇
There are few known semiconductors exhibiting both strong optical response and large dielectric polarizability. Inorganic materials with large dielectric polarizability tend to be wide-band gap complex oxides. Semiconductors with a strong photoresponse to visible and infrared light tend to be weakly polarizable. Interesting exceptions to these trends are halide perovskites and phase-change chalcogenides. Here we introduce complex chalcogenides in the Ba-Zr-S system in perovskite and Ruddlesden-Popper structures as a family of highly polarizable semiconductors. We report the results of impedance spectroscopy on single crystals that establish BaZrS₃ and Ba₃Zr₂S₇ as semiconductors with a low-frequency relative dielectric constant ɛ0 in the range 50–100 and band gap in the range 1.3–1.8 eV. Our electronic structure calculations indicate that the enhanced dielectric response in perovskite BaZrS₃ versus Ruddlesden-Popper Ba₃Zr₂S₇ is primarily due to enhanced IR mode-effective charges and variations in phonon frequencies along 〈001〉; differences in the Born effective charges and the lattice stiffness are of secondary importance. This combination of covalent bonding in crystal structures more common to complex oxides, but comprising sulfur, results in a sizable Fröhlich coupling constant, which suggests that charge carriers are large polarons
Colossal optical anisotropy from atomic-scale modulations
In modern optics, materials with large birefringence ({\Delta}n, where n is
the refractive index) are sought after for polarization control (e.g. in wave
plates, polarizing beam splitters, etc.), nonlinear optics and quantum optics
(e.g. for phase matching and production of entangled photons),
micromanipulation, and as a platform for unconventional light-matter coupling,
such as Dyakonov-like surface polaritons and hyperbolic phonon polaritons.
Layered "van der Waals" materials, with strong intra-layer bonding and weak
inter-layer bonding, can feature some of the largest optical anisotropy;
however, their use in most optical systems is limited because their optic axis
is out of the plane of the layers and the layers are weakly attached, making
the anisotropy hard to access. Here, we demonstrate that a bulk crystal with
subtle periodic modulations in its structure -- Sr9/8TiS3 -- is transparent and
positive-uniaxial, with extraordinary index n_e = 4.5 and ordinary index n_o =
2.4 in the mid- to far-infrared. The excess Sr, compared to stoichiometric
SrTiS3, results in the formation of TiS6 trigonal-prismatic units that break
the infinite chains of face-shared TiS6 octahedra in SrTiS3 into periodic
blocks of five TiS6 octahedral units. The additional electrons introduced by
the excess Sr subsequently occupy the TiS6 octahedral blocks to form highly
oriented and polarizable electron clouds, which selectively boost the
extraordinary index n_e and result in record birefringence ({\Delta}n > 2.1
with low loss). The connection between subtle structural modulations and large
changes in refractive index suggests new categories of anisotropic materials
and also tunable optical materials with large refractive-index modulation and
low optical losses.Comment: Main text + supplementar