Charge Transport Limitations in Perovskite Solar Cells: The Effect of Charge Extraction Layers

Understanding the charge transport characteristics and their limiting factors in organolead halide perovskites is of great importance for the development of competitive and economically advantageous photovoltaic systems derived from these materials. In the present work, we examine the charge carrier mobilities in CH₃NH₃PbI₃ (MAPI) thin films obtained from a one-step synthesis procedure and in planar n–i–p devices based on these films. By performing time-of-flight measurements, we find mobilities around 6 cm²/V s for electrons and holes in MAPI thin films, whereas in working solar cells, the respective effective mobility values are reduced by 3 orders of magnitude. From complementary experiments on devices with varying thicknesses of electron and hole transport layers, we identify the charge extraction layers and the associated interfaces rather than the perovskite material itself as the major limiting factors of the charge carrier transport time in working devices

Grain Boundaries Act as Solid Walls for Charge Carrier Diffusion in Large Crystal MAPI Thin Films

Micro- and nanocrystalline methylammonium lead iodide (MAPI)-based thin-film solar cells today reach power conversion efficiencies of over 20%. We investigate the impact of grain boundaries on charge carrier transport in large crystal MAPI thin films using time-resolved photoluminescence (PL) microscopy and numerical model calculations. Crystal sizes in the range of several tens of micrometers allow for the spatially and time resolved study of boundary effects. Whereas long-ranged diffusive charge carrier transport is observed within single crystals, no detectable diffusive transport occurs across grain boundaries. The observed PL transients are found to crucially depend on the microscopic geometry of the crystal and the point of observation. In particular, spatially restricted diffusion of charge carriers leads to slower PL decay near crystal edges as compared to the crystal center. In contrast to many reports in the literature, our experimental results show no quenching or additional loss channels due to grain boundaries for the studied material, which thus do not negatively affect the performance of the derived thin-film devices

Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ∼50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ∼30% decrease of emission lifetime is observed. The statistics of photons emitted from the cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ∼1.7 × 10⁷ Hz

Fluorescent Carbon Nanotube Defects Manifest Substantial Vibrational Reorganization

Fluorescent defects have opened up exciting new opportunities to chemically tailor semiconducting carbon nanotubes for imaging, sensing, and photonics needs such as lasing, single photon emission, and photon upconversion. However, experimental measurements on the trap depths of these defects show a puzzling energy mismatch between the optical gap (difference in emission energies between the native exciton and defect trap states) and the thermal detrapping energy determined by application of the van ’t Hoff equation. To resolve this fundamentally important problem, here we synthetically incorporated a series of fluorescent aryl defects into semiconducting single-walled carbon nanotubes and experimentally determined their energy levels by temperature-dependent and chemically correlated evolution of exciton population and photoluminescence. We found that depending on the chemical nature and density of defects, the exciton detrapping energy is 14–77% smaller than the optical gap determined from photoluminescence. For the same type of defect, the detrapping energy increases with defect density from 76 to 131 meV for 4-nitroaryl defects in (6,5) single-walled carbon nanotubes, whereas the optical gap remains nearly unchanged (<5 meV). These experimental findings are corroborated by quantum-chemical simulations of the chemically functionalized carbon nanotubes. Our results suggest that the energy mismatch arises from vibrational reorganization due to significant deformation of the nanotube geometry upon exciton trapping at the defect site. An unexpectedly large reorganization energy (on the order of 100 meV) is found between ground and excited states of the defect tailored nanostructures. This finding reveals a molecular picture for description of these synthetic defects and suggests significant potential for tailoring the electronic properties of carbon nanostructures through chemical engineering

Solitary Oxygen Dopant Emission from Carbon Nanotubes Modified by Dielectric Metasurfaces

All-dielectric metasurfaces made from arrays of high index nanoresonators supporting strong magnetic dipole modes have emerged as a low-loss alternative to plasmonic metasurfaces. Here we use oxygen-doped single-walled carbon nanotubes (SWCNTs) as quantum emitters and couple them to silicon metasurfaces to study effects of the magnetic dipole modes of the constituent nanoresonators on the photoluminescence (PL) of individual SWCNTs. We find that when in resonance, the magnetic mode of the silicon nanoresonators can lead to a moderate average PL enhancement of 0.8–4.0 of the SWCNTs, accompanied by an average increase in the radiative decay rate by a factor of 1.5–3.0. More interestingly, single dopant polarization experiments show an anomalous photoluminescence polarization rotation by coupling individual SWCNTs to silicon nanoresonators. Numerical simulations indicate that this is caused by modification of near-field polarization distribution at certain areas in the proximity of the silicon nanoresonators at the excitation wavelength, thus presenting an approach to control emission polarization. These findings indicate silicon nanoresonators as potential building blocks of quantum photonic circuits capable of manipulating PL intensity and polarization of single photon sources

Solvent- and Wavelength-Dependent Photoluminescence Relaxation Dynamics of Carbon Nanotube sp³ Defect States

Photoluminescent sp³ defect states introduced to single wall carbon nanotubes (SWCNTs) through low-level covalent functionalization create new photophysical behaviors and functionality as a result of defect sites acting as exciton traps. Evaluation of relaxation dynamics in varying dielectric environments can aid in advancing a more complete description of defect-state relaxation pathways and electronic structure. Here, we exploit helical wrapping polymers as a route to suspending (6,5) SWCNTs covalently functionalized with 4-methoxy­benzene in solvent systems including H₂O, D₂O, methanol, dimethylformamide, tetrahydrofuran, and toluene, spanning a range of dielectric constants from 80 to 3. Defect-state photoluminescence decays were measured as a function of emission wavelength and solvent environment. Emission decays are biexponential, with short lifetime components on the order of 65 ps and long components ranging from around 100 to 350 ps. Both short and long decay components increase as emission wavelength increases, while only the long lifetime component shows a solvent dependence. We demonstrate that the wavelength dependence is a consequence of thermal detrapping of defect-state excitons to produce mobile E₁₁ excitons, providing an important mechanism for loss of defect-state population. Deeper trap states (i.e., those emitting at longer wavelengths) result in a decreased rate for thermal loss. The solvent-independent behavior of the short lifetime component is consistent with its assignment as the characteristic time for redistribution of exciton population between bright and dark defect states. The solvent dependence of the long lifetime component is shown to be consistent with relaxation via an electronic to vibrational energy transfer mechanism, in which energy is resonantly lost to solvent vibrations in a complementary mechanism to multiphonon decay processes

Low-Temperature Single Carbon Nanotube Spectroscopy of sp³ Quantum Defects

Aiming to unravel the relationship between chemical configuration and electronic structure of sp³ defects of aryl-functionalized (6,5) single-walled carbon nanotubes (SWCNTs), we perform low-temperature single nanotube photoluminescence (PL) spectroscopy studies and correlate our observations with quantum chemistry simulations. We observe sharp emission peaks from individual defect sites that are spread over an extremely broad, 1000–1350 nm, spectral range. Our simulations allow us to attribute this spectral diversity to the occurrence of six chemically and energetically distinct defect states resulting from topological variation in the chemical binding configuration of the monovalent aryl groups. Both PL emission efficiency and spectral line width of the defect states are strongly influenced by the local dielectric environment. Wrapping the SWCNT with a polyfluorene polymer provides the best isolation from the environment and yields the brightest emission with near-resolution limited spectral line width of 270 μeV, as well as spectrally resolved emission wings associated with localized acoustic phonons. Pump-dependent studies further revealed that the defect states are capable of emitting single, sharp, isolated PL peaks over 3 orders of magnitude increase in pump power, a key characteristic of two-level systems and an important prerequisite for single-photon emission with high purity. These findings point to the tremendous potential of sp³ defects in development of room temperature quantum light sources capable of operating at telecommunication wavelengths as the emission of the defect states can readily be extended to this range <i>via</i> use of larger diameter SWCNTs

Giant PbSe/CdSe/CdSe Quantum Dots: Crystal-Structure-Defined Ultrastable Near-Infrared Photoluminescence from Single Nanocrystals

Toward a truly photostable PbSe quantum dot (QD), we apply the thick-shell or “giant” QD structural motif to this notoriously environmentally sensitive nanocrystal system. Namely, using a sequential application of two shell-growth techniquespartial-cation exchange and successive ionic layer adsorption and reaction (SILAR)we are able to overcoat the PbSe QDs with sufficiently thick CdSe shells to impart new single-QD-level photostability, as evidenced by suppression of both photobleaching and blinking behavior. We further reveal that the crystal structure of the CdSe shell (cubic zinc-blende or hexagonal wurtzite) plays a key role in determining the photoluminescence properties of these giant QDs, with only cubic nanocrystals sufficiently bright and stable to be observed as single emitters. Moreover, we demonstrate that crystal structure and particle shape (cubic, spherical, or tetrapodal) and, thereby, emission properties can be synthetically tuned by either withholding or including the coordinating ligand, trioctylphosphine, in the SILAR component of the shell-growth process