2 research outputs found
Effects of Helium Implantation on the Tensile Properties and Microstructure of Ni<sub>73</sub>P<sub>27</sub> Metallic Glass Nanostructures
We report fabrication and nanomechanical
tension experiments on
as-fabricated and helium-implanted ∼130 nm diameter Ni<sub>73</sub>P<sub>27</sub> metallic glass nanocylinders. The nanocylinders
were fabricated by a templated electroplating process and implanted
with He<sup>+</sup> at energies of 50, 100, 150, and 200 keV to create
a uniform helium concentration of ∼3 atom % throughout the
nanocylinders. Transmission electron microscopy imaging and through-focus
analysis reveal that the specimens contained ∼2 nm helium bubbles
distributed uniformly throughout the nanocylinder volume. In situ
tensile experiments indicate that helium-implanted specimens exhibit
enhanced ductility as evidenced by a 2-fold increase in plastic strain
over as-fabricated specimens with no sacrifice in yield and ultimate
tensile strengths. This improvement in mechanical properties suggests
that metallic glasses may actually exhibit a favorable response to
high levels of helium implantation
Mechanically controlling the reversible phase transformation from zinc blende to wurtzite in AlN
<p>III–V and other binary octet semiconductors often take two phase forms—wurtzite (wz) and zinc blende (zb) crystal structures—with distinct functional performance at room temperature. Here, taking AlN as a representative III–V compound, we investigate how to control the synthesized phase structure to either wz or zb phase by tuning the interfacial strain. By applying <i>in situ</i> mechanical tests at atomic scale in a transmission electron microscope, we observed the reversible phase transformation from zb to wz, and characterized the transition path—the collective glide of Shockley partials on every two {111} planes of the zb AlN.</p> <p><b>IMPACT STATEMENT</b></p> <p>The <i>innovation</i> of this paper is that a new type of plastic-deformation-driven reversible phase transition in AlN has been captured at atomic scale.</p