Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS

The 1/f noise in MOSFETs using VHP (vertical high pressure) oxynitride gate insulator was studied. The 1/f noise is degraded by conventional oxynitride gate insulators. It was found that 1/f noise can be improved by using the VHP oxynitride gate insulator

RF Noise Simulation for Submicron MOSFET's Based on Hydrodynamic Model

... In this paper, a mixed approach of one-dimensional active transmission line modeling and two-dimensional HD device simulation is used. The active transmission line analogy greatly saves computation time while the local information from the device simulator retains simulation accuracy. Validity and error of noise simulation are also discussed