傾聴ボランティアの臨床心理学的意義とその養成 [全文の要約]

関西大

傾聴ボランティアの臨床心理学的意義とその養成 [論文要旨及び審査の要旨]

関西大

The Effect of Individual Differences in Odor Awareness on Subjective Time Estimation

It has been reported often that the mechanism behind odor awareness and subjective time involves an empathic process. Three experiments were conducted to test the hypothesis if the dyadic similarity of subjective time estimation suggests empathic bonding, then their individual differences in odor awareness would affect subjective time estimation. Participants (study 1: N＝76, study 2: N＝32, study 3: N＝48) were asked to pair up with another student and play paper-rock-scissors (study 1) or listen to each other (study 2 and 3). Then they individually estimated the duration of the task in seconds. Consistent with the hypothesis, study 1 and 3 showed that the differences in subjective time estimation decreased as the dyadic scores of odor awareness scale increased. But study 2 and 3 was contrary to the prediction. The implications of the individual differences in odor awareness for facilitating or inhibiting empathic bonding are discussed.匂いの感覚と主観的時間の背景にあるメカニズムとして，共感の過程を含むことがしばしば報告されている。本研究では，匂いの感覚の個人差が主観的時間評価に影響するかどうかを検討するため，3 つの実験を実施した。大学生の参加者（研究1 : N = 76, 研究2 : N = 32, 研究3 : N = 48）が二人組を作り，じゃんけん（研究1）あるいは傾聴練習（研究2 と3）を行った。研究1 と3 では，仮説に一致して，匂い気づき尺度の二人の合計が高いほど，二人の主観的時間評定の差が小さくなっていたが，研究2 と3（の一部）は仮説を支持しなかった。匂いの感覚の個人差が，共感的な絆を促進または抑制する点について考察した

Postoperative Prognosis of Breast Cancer Patients Predicted by p53 Gene Mutation in Cancer Cells Obtained by Aspiration Biopsy

The method of cytological examination by fine needle aspiration biopsy (FNAB) was developed clinically in breast cancer and enabled us to prepare cancer cell nuclei for the detection of p53 gene mutation. In the expectation that this method would improve the prediction of postoperative prognosis, the observation of 10 year survival for breast cancer patients with p53 gene mutations was done. The DNA of the aspirated cells was examined preoperatively for gene alterations in 53 patients with breast cancer. The p53 protein accumulation, DNA ploidy pattern, estrogen receptor (ER) , and clinicopathological factors were examined postoperatively The postoperative follow up was conducted over 10 years and evaluated the status of p53 gene mutation. In 26 patients (49.1%) , 29 p53 gene mutations were shown. p53 protein accumulations and DNA aneuploidy patterns were detected in 33 (62.3%) and 42 (79.2%) cases, respectively, and both significantly correlated with p53 gene mutations. With regard to the postoperative prognosis, in over 10 years of observation, the patients who showed p53 mutations had a significantly worse prognosis in both disease free survival and overall survival than those showing negative p53 mutation. A similar tendency was also seen in patients with histologic grade 3. Using FNAB, the usefulness of the preoperative detection of p53 gene mutation was revealed, suggesting its clinical benefits for predicting a patient\u27s prognosis

Hybrid Pixel Devices with SOI-Si photodiode and 4H-SiC MOSFETs for Radiation-Hardened Image Sensors

For the electronics, radiation hardness has been required especially for decommissioning of the Fukushima Daiichi nuclear power station. So far for such the decommissioning operations, many robots have been installed, however the available time for operation is limited by electronics, in particular, image sensors. At a pixel device in a conventional Si CMOS image sensor, Si MOSFETs as reset (RST), source follower (SF), row selector (RS) , are sensitive and vulnerable to radiation, rather than Si photodiodes (PD). Then a combination of Silicon carbide (SiC) MOSFETs and Si PD would be a candidate for the pixel device of the radiation-hardened CMOS image sensors. In this work, SOI (Silicon-On-Insulator)-Si PD and 4H-SiC MOSFETs were integrated in a same substrate for the radiation hardened image sensors. The typical feature size of the SOI-Si PD was 500 μm2 and that of 4H-SiC MOSFET was channel length/ width = 10 μm/ 50 μm. Under dark condition, the output voltage shift from the reset state was 0.62 V. On the other hand, under visible light of 7 klux, the output voltage shift became 0.74 V. The voltage difference between dark and visible-light illuminated condition was dependent on the reset (RST) frequency. As the RST frequency decreased from 100Hz, the voltage difference became larger. As the results, the hybrid pixel devices with SOI-Si PD and 4H-SiC MOSFETs were sucessfully demonstrated.European Conference on Silicon Carbide and Related Materials (ECSCRM 2018

Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors

4H-SiC and SOI substrates were bonded by SiO2-SiO2 direct bonding method with diluted HF solution (0.5 wt.%). After the bonding process, the handle layer and the BOX layer of the SOI substrate were etched by TMAH solution, and finally the silicon active layer with a thickness of 1.5 μm was remained on the 4H-SiC substrate. Using this silicon layer, Si photodiodes on 4H-SiC for the radiation hardened image sensors were fabricated and demonstrated

Output Characteristics of 4H-SiC Pixel Devices for Radiation Hardened UV CMOS Image Sensors

For the decommissioning of the Fukushima Daiichi Nuclear Power Plant, development of a radiation hardened image sensor is key factor to enhance the decommissioning activities. As an ultra-high radiation hardened image sensor, full-4H-SiC pixel devices with a 4H-SiC UV photo diode and four n-channel MOSFETs were developed and the output characteristics were investigated. UV photo current characteristics of the photo diode was increased with shortening the wavelength of illumnating light from 370 nm to 290 nm. The maximal quantum efficiency was 30.7% at the wavelength of 290 nm. Additionally, The 4H-SiC pixel device at the dark and illumination states under the exposure of 300 nm UV light were characterized. At the illumination states, the output voltage became higher by increasing illumination intensity. As the results, photo response of developed full-4H-SiC pixel devices were demonstrated.13th Europian Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021