Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe2_2 and CuGaSe2_2 including a detailed analysis of band-resolved transmittances

We study spin-dependent transport properties in magnetic tunneling junctions (MTJs) with semiconductor barriers, Fe/CuInSe$_2$/Fe(001) and Fe/CuGaSe$_2$/Fe(001). By analyzing their transmittances at zero bias voltage on the basis of the first-principles calculations, we find that spin-dependent coherent tunneling transport of $\Delta_1$ wave functions yields a relatively high magnetoresistance (MR) ratio in both the MTJs. We carry out a detailed analysis of the band-resolved transmittances in both the MTJs and find an absence of the selective transmission of $\Delta_1$ wave functions in some energy regions a few eV away from the Fermi level due to small band gaps in CuInSe$_2$ and CuGaSe$_2$.Comment: 4 pages, 1 figure, 1 tabl

Feasibility Investigation of Obstacle-Avoiding Sensors Unit without Image Processing

Feasibility of a simple method to detect step height, slope angle, and trench width using four infrared-light-source PSD range sensors is examined, and the reproducibility and accuracy of characteristic parameter detection are also examined. Detection error of upward slope angle is within 2.5 degrees, while it is shown that the detection error of downward slope angle exceeding 20 degrees is very large. In order to reduce such errors, a method to improve range-voltage performance of a range sensor is proposed, and its availability is demonstrated. We also show that increase in trial frequency is a better way, although so as not to increase the detection delay. Step height is identified with an error of ±1.5 mm. It is shown that trench width cannot be reliably measured at this time. It is suggested that an additional method is needed if we have to advance the field of obstacle detection

Chemical Doping-Driven Giant Anomalous Hall and Nernst Conductivity in Magnetic Cubic Heusler Compounds

Chemical doping efficiently optimizes the physical properties of Heusler compounds, especially their anomalous transport properties, including anomalous Hall conductivity (AHC) and anomalous Nernst conductivity (ANC). This study systematically investigates the effect of chemical doping on AHC and ANC in 1493 magnetic cubic Heusler compounds using high-throughput first-principles calculations. Notable trends emerge in Co- and Rh-based compounds, where chemical doping effectively enhances the AHC and ANC. Intriguingly, certain doped candidates exhibit outstanding enhancement in AHCs and ANCs, such as (Co$_{0.8}$Ni$_{0.2}$)$_2$FeSn with considerable AHC and ANC values of $-2567.78$~S\,cm$^{-1}$ and $8.27$~A\,m$^{-1}$K$^{-1}$, respectively, and (Rh$_{0.8}$Ru$_{0.2}$)$_2$MnIn with an AHC of $1950.49$~S\,cm$^{-1}$. In particular, an extraordinary ANC of $8.57$~A\,m$^{-1}$K$^{-1}$ is identified exclusively in Rh$_2$Co$_{0.7}$Fe$_{0.3}$In, nearly double the maximum value of $4.36$~A\,m$^{-1}$K$^{-1}$ observed in the stoichiometric Rh$_2$CoIn. A comprehensive band structure analysis underscores that the notable enhancement in ANC arises from the creation and modification of the energy-dependent nodal lines through chemical doping. This mechanism generates a robust Berry curvature, resulting in significant ANCs. These findings emphasize the pivotal role of chemical doping in engineering high-performance materials, thereby expanding the horizons of transport property optimization within Heusler compounds.Comment: 18 pages, 8 figure