Ultrafast Charge- and Energy-Transfer Dynamics in Conjugated Polymer: Cadmium Selenide Nanocrystal Blends

Hybrid nanocrystal–polymer systems are promising candidates for photovoltaic applications, but the processes controlling charge generation are poorly understood. Here, we disentangle the energy- and charge-transfer processes occurring in a model system based on blends of cadmium selenide nanocrystals (CdSe-NC) with poly[2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylene vinylene] (MDMO-PPV) using a combination of time-resolved absorption and luminescence measurements. The use of different capping ligands (<i>n</i>-butylamine, oleic acid) as well as thermal annealing allows tuning of the polymer–nanocrystal interaction. We demonstrate that energy transfer from MDMO-PPV to CdSe-NCs is the dominant exciton quenching mechanism in nonannealed blends and occurs on ultrafast time scales (<1 ps). Upon thermal annealing electron transfer becomes competitive with energy transfer, with a transfer rate of 800 fs independent of the choice of the ligand. Interestingly, we find hole transfer to be much less efficient than electron transfer and to extend over several nanoseconds. Our results emphasize the importance of tuning the organic–nanocrystal interaction to achieve efficient charge separation and highlight the unfavorable hole-transfer dynamics in these blends

Preventing Interfacial Recombination in Colloidal Quantum Dot Solar Cells by Doping the Metal Oxide

Recent research has pushed the efficiency of colloidal quantum dot solar cells toward a level that spurs commercial interest. Quantum dot/metal oxide bilayers form the most efficient colloidal quantum dot solar cells, and most studies have advanced the understanding of the quantum dot component. We study the interfacial recombination process in depleted heterojunction colloidal quantum dot (QD) solar cells formed with ZnO as the oxide by varying (i) the carrier concentration of the ZnO layer and (ii) the density of intragap recombination sites in the QD layer. We find that the open-circuit voltage and efficiency of PbS QD/ZnO devices can be improved by 50% upon doping of the ZnO with nitrogen to reduce its carrier concentration. In contrast, doping the ZnO did not change the performance of PbSe QD/ZnO solar cells. We use X-ray photoemission spectroscopy, ultraviolet photoemission spectroscopy, transient photovoltage decay measurements, transient absorption spectroscopy, and intensity-dependent photocurrent measurements to investigate the origin of this effect. We find a significant density of intragap states within the band gap of the PbS quantum dots. These states facilitate recombination at the PbS/ZnO interface, which can be suppressed by reducing the density of occupied states in the ZnO. For the PbSe QD/ZnO solar cells, where fewer intragap states are observed in the quantum dots, the interfacial recombination channel does not limit device performance. Our study sheds light on the mechanisms of interfacial recombination in colloidal quantum dot solar cells and emphasizes the influence of quantum dot intragap states and metal oxide properties on this loss pathway

Size and Energy Level Tuning of Quantum Dot Solids via a Hybrid Ligand Complex

The performance of quantum dots (QDs) in optoelectronic devices suffers as a result of sub-bandgap states induced by the large fraction of atoms on the surface of QDs. Recent progress in passivating these surface states with thiol ligands and halide ions has led to competitive efficiencies. Here, we apply a hybrid ligand mixture to passivate PbSe QD sub-bandgap tail states via a low-temperature, solid-state ligand exchange. We show that this ligand mixture allows tuning of the energy levels and the physical QD size in the solid state during film formation. We hereby present a novel, postsynthetic path to tune the properties of QD films