ELECTRICAL CHARACTERIZATION OF THE FORWARD CURRENTVOLTAGE OF AL IMPLANTED 4H-SIC PIN DIODES

ABSTRACTIn this work,theforward current-voltagecharacteristics of n-type Al implanted 4H-SiC pin diodeshave been investigatedexperimentally and by mean of numerical simulations in the 298-378K temperature range. Our simulations were performedusing proprietary simulations software. The model parameters to be calibrated in the simulation are the electron and holeminority carriers lifetimes.The measured forward I-V characteristics showed two differentbehaviour, the leaky behaved andwell behaved diode. The later diodes were considered for simulation comparison.Employing temperature-dependent carrierlifetimes as a fitting parameter, the simulation indicates that drift layer and bulk carrier lifetime ranging from 10ns to 50ns. Weachieved a good agreement between simulations and measured data. The measured and the simulated forward characteristicsindicate an ideality factor of about1.3for the region 2.5V-2.78Vand 2.14 in the low injection region. Activation energies ofabout 1.61eV and 2.51eVare obtained respectively which are in good agreement with the expected values.KEYWORDS: p-i-n diode, silicon carbide, silvaco, device simulation, lifetimes

MEASUREMENT AND ANALYSIS OF I-V-T CHARACTERISTICS OF A AUGENI/P-SI SCHOTTKY BARRIER DIODE

ABSTRACTIn this work, we report measured forward current voltage characteristics of AuGeNi/p-Si schottky barrier diode in thetemperature range of 295-400 °K. Forward current voltage characteristics were investigated. This investigation is based on theanalysis of the dependency of extracted parameters such as ideality factor (η), barrier height ( ) and saturation current ( )on temperature. The Richardson coefficient was examined by means of the saturation versus temperature. While η decreases,ØB0 increases with increasing temperature. Obtained Richardson constant value of the A*=11.5 x10-7Acm-2K-2 is very lowcompared to the standard value. The modified Richardson plot has given mean barrier height and Richardson constant(A*) as 1.15 eV and 30.53 Am-2K-2, respectively. The temperature dependence of the I–V characteristics of the AuGeNi/p-SiSchottky diode have been successfully explained on the basis of thermionic emission (TE) mechanism with Gaussiandistribution of the Schottky barrier heights (SBHs).KEYWORDS: Schottky contacts, current-voltage-temperature characteristics, Gaussian distribution, Barrier inhomogeneity