ABSTRACTIn this work, we report measured forward current voltage characteristics of AuGeNi/p-Si schottky barrier diode in thetemperature range of 295-400 °K. Forward current voltage characteristics were investigated. This investigation is based on theanalysis of the dependency of extracted parameters such as ideality factor (η), barrier height ( ) and saturation current ( )on temperature. The Richardson coefficient was examined by means of the saturation versus temperature. While η decreases,ØB0 increases with increasing temperature. Obtained Richardson constant value of the A*=11.5 x10-7Acm-2K-2 is very lowcompared to the standard value. The modified Richardson plot has given mean barrier height and Richardson constant(A*) as 1.15 eV and 30.53 Am-2K-2, respectively. The temperature dependence of the I–V characteristics of the AuGeNi/p-SiSchottky diode have been successfully explained on the basis of thermionic emission (TE) mechanism with Gaussiandistribution of the Schottky barrier heights (SBHs).KEYWORDS: Schottky contacts, current-voltage-temperature characteristics, Gaussian distribution, Barrier inhomogeneity
