Easy 4G/LTE IMSI Catchers for Non-Programmers

IMSI Catchers are tracking devices that break the privacy of the subscribers of mobile access networks, with disruptive effects to both the communication services and the trust and credibility of mobile network operators. Recently, we verified that IMSI Catcher attacks are really practical for the state-of-the-art 4G/LTE mobile systems too. Our IMSI Catcher device acquires subscription identities (IMSIs) within an area or location within a few seconds of operation and then denies access of subscribers to the commercial network. Moreover, we demonstrate that these attack devices can be easily built and operated using readily available tools and equipment, and without any programming. We describe our experiments and procedures that are based on commercially available hardware and unmodified open source software

Bijectivity of the canonical map for the noncommutative instanton bundle

It is shown that the quantum instanton bundle introduced in Commun. Math. Phys. 226, 419-432 (2002) has a bijective canonical map and is, therefore, a coalgebra Galois extension.Comment: Latex, 12 pages. Published versio

Twisted Hochschild Homology of Quantum Hyperplanes

We calculate the Hochschild dimension of quantum hyperplanes using the twisted Hochschild homology.Comment: 12 pages, LaTe

Why is the nuclear symmetry energy so uncertain at supra-saturation densities?

Within the interacting Fermi gas model for isospin asymmetric nuclear matter, effects of the in-medium three-body interaction and the two-body short-range tensor force due to the $\rho$ meson exchange as well as the short-range nucleon correlation on the high-density behavior of the nuclear symmetry energy are demonstrated respectively in a transparent way. Possible physics origins of the extremely uncertain nuclear symmetry energy at supra-saturation densities are discussed.Comment: Added discussions and revised format. Version to appear in Phys. Rev. C (2010

Direct Graphene Growth on Insulator

Fabrication of graphene devices is often hindered by incompatibility between the silicon technology and the methods of graphene growth. Exfoliation from graphite yields excellent films but is good mainly for research. Graphene grown on metal has a technological potential but requires mechanical transfer. Growth by SiC decomposition requires a temperature budget exceeding the technological limits. These issues could be circumvented by growing graphene directly on insulator, implying Van der Waals growth. During growth, the insulator acts as a support defining the growth plane. In the device, it insulates graphene from the Si substrate. We demonstrate planar growth of graphene on mica surface. This was achieved by molecular beam deposition above 600{\deg}C. High resolution Raman scans illustrate the effect of growth parameters and substrate topography on the film perfection. Ab initio calculations suggest a growth model. Data analysis highlights the competition between nucleation at surface steps and flat surface. As a proof of concept, we show the evidence of electric field effect in a transistor with a directly grown channel.Comment: 13 pages, 6 figure