ZEP520A Spin Curves and Dilution Characterization

Spin curves for ZEP520A from ZEON Chemicals for the Singh Center for Nanotechnology were studied under non-diluted and diluted conditions by weight

Elionix ELS-7500EX: Field Size Analysis

This report documents the field distortion of the Elionix ELS-7500EX electron beam lithography system at the University of Pennsylvania Singh Center for Nanotechnology at the Quattrone Nanofabrication Facility. The system is equipped with a 20MHz fixed clock and fixed focus. The aim of the work is to understand optimal field sizes to use for critical dimensions 80nm and above. Field uniformity was analyzed as a function of critical dimension and objective lens aperture (OLA) a.k.a. final paerture. As features scale down below 300nm, they are more susceptible to the systematic effects of field distortion. Suggested field sizes depend on the feature size that is desired

ZEP520A Contrast Curves

This report documents the contrast curves for the ZEP520A electron beam lithography resist from ZEON Chemicals. Dilution by weight of ZEP520A vs spin speed from 1000 to 6000 rpm was generated in previous work. The aim is to provide an approximate clearing and base dose for the ZEP520A standard process at the Singh Center for Nanotechnology

PMMA A2 Contrast Curves

This report documents the contrast curves for the PMMA A2 electron beam lithography resist from MicroChem. Spin curves for PMMA A2 can be found in previous work. The aim is to provide an approximate clearing and base dose for the PMMA A2 standard process at the Singh Center for Nanotechnology

PMMA A2 and A4 Spin Curves

This report documents the spin curves for the PMMA A2 and A4 electron beam lithography resists from MicroChem. The aim is to provide a spin curve reference for the A2 and A4 dilutions at the Singh Center for Nanotechnolgy Quattrone Nanofabrication Facility

DisCharge: Spin-On Anti-Charging Agent for Electron Beam Lithography

This report documents the chemical DisCharge from DisChem, Inc. used as an anti-charging agent for electron beam lithography at the University of Pennsylvania Singh Center for Nanotechnology Quattrone Nanofabrication Facility. Charge accumulation while exposing atop an electrically insulating substrate can severely impact positional accuracy of the beam yielding poor litho. Using DisCharge has been shown to reduce charge accumulation for insulating substrates such as fused silica pieces, glass slides, and PDMS for positive resists such as PMMA, ZEP520A, CSAR 62 and mr-PosEBR