Convolutional compressed sensing using deterministic sequences

This is the author's accepted manuscript (with working title "Semi-universal convolutional compressed sensing using (nearly) perfect sequences"). The final published article is available from the link below. Copyright @ 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.In this paper, a new class of orthogonal circulant matrices built from deterministic sequences is proposed for convolution-based compressed sensing (CS). In contrast to random convolution, the coefficients of the underlying filter are given by the discrete Fourier transform of a deterministic sequence with good autocorrelation. Both uniform recovery and non-uniform recovery of sparse signals are investigated, based on the coherence parameter of the proposed sensing matrices. Many examples of the sequences are investigated, particularly the Frank-Zadoff-Chu (FZC) sequence, the m-sequence and the Golay sequence. A salient feature of the proposed sensing matrices is that they can not only handle sparse signals in the time domain, but also those in the frequency and/or or discrete-cosine transform (DCT) domain

Process feasibility study in support of silicon material, task 1

Analyses of process system properties were continued for materials involved in the alternate processes under consideration for semiconductor silicon. Primary efforts centered on physical and thermodynamic property data for dichlorosilane. The following property data are reported for dichlorosilane which is involved in processing operations for solar cell grade silicon: critical temperature, critical pressure, critical volume, critical density, acentric factor, vapor pressure, heat of vaporization, gas heat capacity, liquid heat capacity and density. Work was initiated on the assembly of a system to prepare binary gas mixtures of known proportions and to measure the thermal conductivity of these mixtures between 30 and 350 C. The binary gas mixtures include silicon source material such as silanes and halogenated silanes which are used in the production of semiconductor silicon

Extremal covariant POVM's

We consider the convex set of positive operator valued measures (POVM) which are covariant under a finite dimensional unitary projective representation of a group. We derive a general characterization for the extremal points, and provide bounds for the ranks of the corresponding POVM densities, also relating extremality to uniqueness and stability of optimized measurements. Examples of applications are given.Comment: 15 pages, no figure

Superior removal of arsenic from water with zirconium metal-organic framework UiO-66

10.1038/srep16613Scientific Reports51661

Least-Squares Approximation by Elements from Matrix Orbits Achieved by Gradient Flows on Compact Lie Groups

Let $S(A)$ denote the orbit of a complex or real matrix $A$ under a certain equivalence relation such as unitary similarity, unitary equivalence, unitary congruences etc. Efficient gradient-flow algorithms are constructed to determine the best approximation of a given matrix $A_0$ by the sum of matrices in $S(A_1), ..., S(A_N)$ in the sense of finding the Euclidean least-squares distance $$\min \{\|X_1+ ... + X_N - A_0\|: X_j \in S(A_j), j = 1, >..., N\}.$$ Connections of the results to different pure and applied areas are discussed

Effect of the Fermi surface destruction on transport properties in underdoped cuprates

Motivated by recent experimental measurements on the Fermi surface(FS) destruction in underdoped high-$T_{c}$ cuprates, we examine its effect on the transport properties based on the Boltzmann equation approach. The effect is modeled by simply taking the density of states for electrons in the gapped regions to be zero. Within the nearly antiferromagnetic Fermi liquid model, we calculate the temperature dependences of the dc resistivity, the inverse Hall angle and the Hall coefficient. It is shown that the effect of the FS destruction on transport properties is sensitive to the existance and the range of the flat band near $(0,\pm\pi)$ in the dispersion of electrons, and the anistropy of the relaxation rate along the Fermi surface. We find that the experimental data are better described by the cold spot model, i.e., the transports are determined mainly by the contribution of the electrons near the Brillouin-zone diagonals.Comment: 8 pages, 7 figure

The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate

The impacts of surface conditions on the growth of Ge nanowires on a Si (100) substrate are discussed in detail. On SiO2-terminated Si substrates, high-density Ge nanowires can be easily grown. However, on H-terminated Si substrates, growing Ge nanowires is more complex. The silicon migration and the formation of a native SiO2 overlayer on a catalyst surface retard the growth of Ge nanowires. After removing this overlayer in the HF solution, high-density and well-ordered Ge nanowires are grown. Ge nanowires cross vertically and form two sets of parallel nanowires. It is found that nanowires grew along ?110? direction