Strange bedfellows inside a superconductor

The discovery of superconducting cuprates in 1986 is considered a watershed moment in the study of superconductivity—not only because of their high superconducting temperatures (TC’s) but also on account of their highly exotic properties, which are still largely enigmatic (1). On page 1506 of this issue, Wahlberg et al. (2) bring insights into the intriguing physics of cuprates’ nonsuperconducting state by connecting two widely studied phenomena previously believed to be completely independent of each other: the linear resistivity of the strange metallic phase and charge density waves (CDWs)

Bosonic excitation spectra of superconducting Bi2Sr2CaCu2O8+δ\mathrm{Bi_2Sr_2CaCu_2O_{8+\delta}} and YBa2Cu3O6+x\mathrm{YBa_2Cu_3O_{6+x}} extracted from scanning tunneling spectra

A detailed interpretation of scanning tunneling spectra obtained on unconventional superconductors enables one to gain information on the pairing boson. Decisive for this approach are inelastic tunneling events. Due to the lack of momentum conservation in tunneling from or to the sharp tip, those are enhanced in the geometry of a scanning tunneling microscope compared to planar tunnel junctions. This work extends the method of obtaining the bosonic excitation spectrum by deconvolution from tunneling spectra to nodal $d$-wave superconductors. In particular, scanning tunneling spectra of slightly underdoped $\mathrm{Bi_2Sr_2CaCu_2O_{8+\delta}}$ with a $T_c$ of $82\,\mathrm{K}$ and optimally doped $\mathrm{YBa_2Cu_3O_{6+x}}$ with a $T_c$ of $92\,\mathrm{K}$ reveal a resonance mode in their bosonic excitation spectrum at $\Omega_\mathrm{res} \approx 63\,\mathrm{meV}$ and $\Omega_\mathrm{res} \approx 61\,\mathrm{meV}$ respectively. In both cases, the overall shape of the bosonic excitation spectrum is indicative of predominant spin scattering with a resonant mode at $\Omega_\mathrm{res}<2\Delta$ and overdamped spin fluctuations for energies larger than $2\Delta$. To perform the deconvolution of the experimental data, we implemented an efficient iterative algorithm that significantly enhances the reliability of our analysis

Giant non-volatile electric field control of proximity induced magnetism in the spin-orbit semimetal SrIrO3

With its potential for drastically reduced operation power of information processing devices, electric field control of magnetism has generated huge research interest. Recently, novel perspectives offered by the inherently large spin-orbit coupling of 5d transition metals have emerged. Here, we demonstrate non-volatile electrical control of the proximity induced magnetism in SrIrO3 based back-gated heterostructures. We report up to a 700 % variation of the anomalous Hall conductivity {\sigma}_AHE and Hall angle {\theta}_AHE as function of the applied gate voltage Vg. In contrast, the Curie temperature TC = 100K and magnetic anisotropy of the system remain essentially unaffected by Vg indicating a robust ferromagnetic state in SrIrO3 which strongly hints to gating-induced changes of the anomalous Berry curvature. The electric-field induced ferroelectric-like state of SrTiO3 enables non-volatile switching behavior of {\sigma}_AHE and {\theta}_AHE below 60 K. The large tunability of this system, opens new avenues towards efficient electric-field manipulation of magnetism.Comment: 13 pages, 5 figures, to be published in Advanced Functional Material

Direct Observation of Strong Anomalous Hall Effect and Proximity-induced Ferromagnetic State in SrIrO₃

The 5d iridium-based transition metal oxides have gained broad interest because of their strong spin-orbit coupling which favors new or exotic quantum electronic states. On the other hand, they rarely exhibit more mainstream orders like ferromagnetism due to generally weak electron-electron correlation strength. Here, we show a proximity-induced ferromagnetic (FM) state with TC ≈ 100 K and strong magnetocrystalline anisotropy in a SrIrO3 (SIO) heterostructure via interfacial charge transfer by using a ferromagnetic insulator in contact with SIO. Electrical transport allows to selectively probe the FM state of the SIO layer and the direct observation of a strong, intrinsic and positive anomalous Hall effect (AHE). For T ≤ 20 K, the AHE displays unusually large coercive and saturation field, a fingerprint of a strong pseudospin-lattice coupling. A Hall angle, σxyAHE/σxx, larger by an order of magnitude than in typical 3d metals and a FM net moment of about 0.1 μB/Ir, is reported. This emphasizes how efficiently the nontrivial topological band properties of SIO can be manipulated by structural modifications and the exchange interaction with 3d TMOs

Strange semimetal dynamics in SrIrO3_3

The interplay of electronic correlations, multi-orbital excitations, and strong spin-orbit coupling is a fertile ground for new states of matter in quantum materials. Here, we report on a confocal Raman scattering study of momentum-resolved charge dynamics from a thin film of semimetallic perovskite $\mathbf{SrIrO_3}$. We demonstrate that the charge dynamics, characterized by a broad continuum, is well described in terms of the marginal Fermi liquid phenomenology. In addition, over a wide temperature regime, the inverse scattering time is for all momenta close to the Planckian limit $\mathbf{\tau^{-1}_{\hbar}=k_{\rm B} T/\hbar}$. Thus, $\mathbf{SrIrO_3}$ is a semimetallic multi-band system that is as correlated as, for example, the cuprate superconductors. The usual challenge to resolve the charge dynamics in multi-band systems with very different mobilities is circumvented by taking advantage of the momentum space selectivity of polarized electronic Raman scattering. The Raman responses of both hole- and electron-pockets display an electronic continuum extending far beyond 1000\icm ($\sim$125 meV), much larger than allowed by the phase space for creating particle-hole pairs in a regular Fermi liquid. Analyzing this response in the framework of a memory function formalism, we are able to extract the frequency dependent scattering rate and mass enhancement factor of both types of charge carriers, which in turn allows us to determine the carrier-dependent mobilities and electrical resistivities. The results are well consistent with transport measurement and demonstrate the potential of this approach to investigate the charge dynamics in multi-band systems

From valence fluctuations to long-range magnetic order in EuPd2_2(Si1−x_{1-x}Gex_x)2_2 single crystals

EuPd$_2$Si$_2$ is a valence-fluctuating system undergoing a temperature-induced valence crossover at $T'_V\approx160\,$K. We present the successful single crystal growth using the Czochralski method for the substitution series EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$, with substitution levels $x\leq 0.15$. A careful determination of the germanium content revealed that only half of the nominal concentration is build into the crystal structure. From thermodynamic measurements it is established that $T'_V$ is strongly suppressed for small substitution levels and antiferromagnetic order from stable divalent europium emerges for $x\gtrsim 0.10$. The valence transition is accompanied by a pronounced change of the lattice parameter $a$ of order 1.8%. In the antiferromagnetically ordered state below $T_N = 47$ K, we find sizeable magnetic anisotropy with an easy plane perpendicular to the crystallographic c direction. An entropy analysis revealed that no valence fluctuations are present for the magnetically ordered materials. Combining the obtained thermodynamic and structural data, we construct a concentration-temperature phase diagram demonstrating a rather abrupt change from a valence-fluctuating to a magnetically-ordered state in EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$