VLA/JVLA monitoring of bright northern radio sources

We report multiple epoch VLA/JVLA observations of 89 northern hemisphere sources, most with 37 GHz flux density >1 Jy, observed at 4.8, 8.5, 33.5, and 43.3 GHz. The high frequency selection leads to a predominantly flat spectrum sample, with 85% of our sources being in the Planck Early Release Compact Source Catalog (ERCSC). These observations allow us to: 1) validate Planck’s 30 and 44 GHz flux density scale; 2) extend the radio spectral energy distributions of Planck sources to lower frequencies allowing for the full 5−857 GHz regime to be studied; and 3) characterize the variability of these sources. At 30 GHz and 44 GHz, the JVLA and Planck flux densities agree to within ~3%. On timescales of less than two months the median variability of our sources is 2%. On timescales of about a year the median variability increases to 14%. Using the WMAP 7-year data, the 30 GHz median variability on a 1−6 years timescale is 16%

Thermal detection of single e-h pairs in a biased silicon crystal detector

We demonstrate that individual electron-hole pairs are resolved in a 1 cm$^2$ by 4 mm thick silicon crystal (0.93 g) operated at $\sim$35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor (QET) arrays held near ground potential. The other side contains a bias grid with 20\% coverage. Bias potentials up to $\pm$ 160 V were used in the work reported here. A fiber optic provides 650~nm (1.9 eV) photons that each produce an electron-hole ($e^{-} h^{+}$) pair in the crystal near the grid. The energy of the drifting charges is measured with a phonon sensor noise $\sigma$ $\sim$0.09 $e^{-} h^{+}$ pair. The observed charge quantization is nearly identical for $h^+$'s or $e^-$'s transported across the crystal.Comment: 4 journal pages, 5 figure

Spatial imaging of charge transport in silicon at low temperature

We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm crystal of high purity silicon (∼20 kΩ cm) at temperatures between 500 mK and 5 K. We use these data to determine the intervalley scattering rate of electrons as a function of the electric field applied along the ⟨111⟩ crystal axis, and we present a phenomenological model of intervalley scattering which explains the constant scattering rate seen at low-voltage for cryogenic temperatures. We also demonstrate direct imaging measurements of effective hole mass anisotropy, which is strongly dependent on both temperature and electric field strength. The observed effects can be explained by a warping of the valence bands for carrier energies near the spin-orbit splitting energy in silicon

Spatial Imaging of Charge Transport in Silicon at Low Temperature

We present direct imaging measurements of charge transport across a 1 cm$\times$ 1 cm$\times$ 4 mm crystal of high purity silicon ($\sim$20 k$\Omega$cm) at temperatures between 500 mK and and 5 K. We use these data to determine the intervalley scattering rate of electrons as a function of the electric field applied along the $\langle 111 \rangle$ crystal axis, and we present a phenomenological model of intervalley scattering that explains the constant scattering rate seen at low-voltage for cryogenic temperatures. We also demonstrate direct imaging measurements of effective hole mass anisotropy, which is strongly dependent on both temperature and electric field strength. The observed effects can be explained by a warping of the valence bands for carrier energies near the spin-orbit splitting energy in silicon.Comment: 5 Pages, 5 Figures. Submitted to Applied Physics Letter

Two-Stage Cryogenic HEMT Based Amplifier For Low Temperature Detectors

To search for dark matter candidates with masses below $\mathcal{O}$(MeV), the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors with electronic bandgaps on the order of 1-100 meV. In order to detect the charge signal produced by scattering or absorption events, SPLENDOR has designed a two-stage cryogenic HEMT-based amplifier with an estimated charge resolution approaching the single-electron level. A low-capacitance ($\sim$1.6 pF) HEMT is used as a buffer stage at $T=10\,\mathrm{mK}$ to mitigate effects of stray capacitance at the input. The buffered signal is then amplified by a higher-capacitance ($\sim$200 pF) HEMT amplifier stage at $T=4\,\mathrm{K}$. Importantly, the design of this amplifier makes it usable with any insulating material - allowing for rapid prototyping of a variety of novel detector materials. We present the two-stage cryogenic amplifier design, preliminary voltage noise performance, and estimated charge resolution of 7.2 electrons.Comment: 4 pages, 3 figures, 1 table, conference proceedings for LTD2

Results from the Super Cryogenic Dark Matter Search (SuperCDMS) experiment at Soudan

We report the result of a blinded search for Weakly Interacting Massive Particles (WIMPs) using the majority of the SuperCDMS Soudan dataset. With an exposure of 1690 kg days, a single candidate event is observed, consistent with expected backgrounds. This analysis (combined with previous Ge results) sets an upper limit on the spin-independent WIMP--nucleon cross section of $1.4 \times 10^{-44}$ ($1.0 \times 10^{-44}$) cm$^2$ at 46 GeV/$c^2$. These results set the strongest limits for WIMP--germanium-nucleus interactions for masses $>$12 GeV/$c^2$