Quantum Hall resistance dartboards using graphene p-n junction devices with Corbino geometries

The use of multiple current terminals on millimeter-scale graphene p-n junction devices fabricated with Corbino geometries, or quantum Hall resistance dartboards, has enabled the measurement of several fractional multiples of the quantized Hall resistance at the ν = 2 plateau (RH ≈ 12 906 Ω). Experimentally obtained values agreed with the corresponding numerical simulations performed with the LTspice circuit simulator. More complicated designs of the quantum Hall resistance dartboard were simulated to establish the potential parameter space within which these Corbino-type devices could output resistance. Most importantly, these measurements support simpler processes of ultraviolet lithography as a more efficient means of scaling up graphene-based device sizes while maintaining sufficiently narrow junctions

Accessing ratios of quantized resistances in graphene p–n junction devices using multiple terminals

The utilization of multiple current terminals on millimeter-scale graphene p–n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the ν = 2 plateau (RH ≈ 12 906 Ω). These fractions take the form abRH and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness.The utilization of multiple current terminals on millimeter-scale graphene p–n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the ν = 2 plateau (RH ≈ 12 906 Ω). These fractions take the form abRH and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness

Nonconventional Quantized Hall Resistances Obtained with ν = 2 Equilibration in Epitaxial Graphene p-n Junctions

We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene p−n junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at ν=2 (RH≈12906Ω) that take the form: (a/b)RH. Here, a and b have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of RH. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials

Photosynthetic responses in Phaeocystis antarctica towards varying light and iron conditions

The effects of iron limitation on photoacclimation to a dynamic light regime were studied in Phaeocystis antarctica. Batch cultures were grown under a sinusoidal light regime, mimicking vertical mixing, under both iron-sufficient and -limiting conditions. Iron-replete cells responded to changes in light intensity by rapid xanthophyll cycling. Maximum irradiance coincided with maximum ratios of diatoxanthin/diadinoxanthin (dt/dd). The maximum quantum yield of photosynthesis (F-v /F-m) was negatively related to both irradiance and dt/dd. Full recovery of F-v /F-m by the end of the light period suggested successful photoacclimation. Iron-limited cells displayed characteristics of high light acclimation. The ratio of xanthophyll pigments to chlorophyll a was three times higher compared to iron-replete cells. Down-regulation of photosynthetic activity was moderated. It is argued that under iron limitation cells maintain a permanent state of high energy quenching to avoid photoinhibition during exposure to high irradiance. Iron-limited cells could maintain a high growth potential due to an increased absorption capacity as recorded by in vivo absorption, which balanced a decrease in F-v/F-m . The increase in the chlorophyll a-specific absorption cross section was related to an increase in carotenoid pigments and a reduction in the package effect. These experiments show that P. antarctica can acclimate successfully to conditions as they prevail in the Antarctic ocean, which may explain the success of this species

Radiative cooling test facility and performance evaluation of 4-MIL aluminized polyvinyl fluoride and white-paint surfaces

A test facility designed to measure the amount of radiative cooling a specific material or assembly of materials will produce when exposed to the sky is described. Emphasis is placed upon assemblies which are specifically designed to produce radiative cooling and which therefore offer promise for the reduction of temperatures and/or humidities in occupied spaces. The hardware and software used to operate the facility are documented and the results of the first comprehensive experiments are presented. A microcomputer-based control/data acquisition system was employed to study the performance of two prototype radiator surfaces: 4-mil aluminized polyvinyl fluoride (PVF) and white painted surfaces set below polyethylene windscreens. The cooling rates for materials tested were determined and can be approximated by an equation (given). A computer model developed to simulate the cooling process is presented. (MCW