Conduction channels of an InAs-Al nanowire Josephson weak link

We present a quantitative characterization of an electrically tunable Josephson junction defined in an InAs nanowire proximitized by an epitax-ially-grown superconducting Al shell. The gate-dependence of the number of conduction channels and of the set of transmission coefficients are extracted from the highly nonlinear current-voltage characteristics. Although the transmissions evolve non-monotonically, the number of independent channels can be tuned, and configurations with a single quasi-ballistic channel achieved.Comment: Added reference in New Journal of Physics, corrected a few typos, and updated reference

Topological Phases in InAs1−xSbx:From Novel Topological Semimetal to Majorana Wire

Superconductor proximitized one-dimensional semiconductor nanowires with strong spin-orbit interaction (SOI) are at this time the most promising candidates for the realization of topological quantum information processing. In current experiments the SOI originates predominantly from extrinsic fields, induced by finite size effects and applied gate voltages. The dependence of the topological transition in these devices on microscopic details makes scaling to a large number of devices difficult unless a material with dominant intrinsic bulk SOI is used. Here we show that wires made of certain ordered alloys InAs$_{1-x}$Sb$_x$ have spin-splittings up to 20 times larger than those reached in pristine InSb wires. In particular, we show this for a stable ordered CuPt-structure at $x = 0.5$, which has an inverted band ordering and realizes a novel type of a topological semimetal with triple degeneracy points in the bulk spectrum that produce topological surface Fermi arcs. Experimentally achievable strains can drive this compound either into a topological insulator phase, or restore the normal band ordering making the CuPt-ordered InAs$_{0.5}$Sb$_{0.5}$ a semiconductor with a large intrinsic linear in $k$ bulk spin splitting.Comment: 6 pages, 5 figure

Gatemon benchmarking and two-qubit operations

Recent experiments have demonstrated superconducting transmon qubits with semiconductor nanowire Josephson junctions. These hybrid gatemon qubits utilize field effect tunability characteristic for semiconductors to allow complete qubit control using gate voltages, potentially a technological advantage over conventional flux-controlled transmons. Here, we present experiments with a two-qubit gatemon circuit. We characterize qubit coherence and stability and use randomized benchmarking to demonstrate single-qubit gate errors below 0.7% for all gates, including voltage-controlled $Z$ rotations. We show coherent capacitive coupling between two gatemons and coherent swap operations. Finally, we perform a two-qubit controlled-phase gate with an estimated fidelity of 91%, demonstrating the potential of gatemon qubits for building scalable quantum processors

InAs-Al Hybrid Devices Passing the Topological Gap Protocol

We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations for robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin {\it et al.}\ [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at {\it both} ends of the devices that withstand changes in the junction transparencies. The measured maximum topological gaps in our devices are 20-$30\,\mu$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes.Comment: Fixed typos. Fig. 3 is now readable by Adobe Reade