EXTENSION-2000 A.D.- COMMENTS

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The von Karman equations, the stress function, and elastic ridges in high dimensions

The elastic energy functional of a thin elastic rod or sheet is generalized to the case of an M-dimensional manifold in N-dimensional space. We derive potentials for the stress field and curvatures and find the generalized von Karman equations for a manifold in elastic equilibrium. We perform a scaling analysis of an M-1 dimensional ridge in an M = N-1 dimensional manifold. A ridge of linear size X in a manifold with thickness h << X has a width w ~ h^{1/3}X^{2/3} and a total energy E ~ h^{M} (X/h)^{M-5/3}. We also prove that the total bending energy of the ridge is exactly five times the total stretching energy. These results match those of A. Lobkovsky [Phys. Rev. E 53, 3750 (1996)] for the case of a bent plate in three dimensions.Comment: corrected references, 27 pages, RevTeX + epsf, 2 figures, Submitted to J. Math. Phy

Tungsten-rhenium alloy thermocouples effective for high-temperature measurement

Tungsten-rhenium alloy thermocouples, specifically, insulated, sheathed W/W plus 26Re and W plus 5 Re/W plus 26 Re thermocouples, are effective for temperature measurement in excess of 2920 degrees C. These thermocouples have a high thermoelectric output and excellent relationship to temperatures up to 2760 degrees C

Crustal deformation, the earthquake cycle, and models of viscoelastic flow in the asthenosphere

The crustal deformation patterns associated with the earthquake cycle can depend strongly on the rheological properties of subcrustal material. Substantial deviations from the simple patterns for a uniformly elastic earth are expected when viscoelastic flow of subcrustal material is considered. The detailed description of the deformation pattern and in particular the surface displacements, displacement rates, strains, and strain rates depend on the structure and geometry of the material near the seismogenic zone. The origin of some of these differences are resolved by analyzing several different linear viscoelastic models with a common finite element computational technique. The models involve strike-slip faulting and include a thin channel asthenosphere model, a model with a varying thickness lithosphere, and a model with a viscoelastic inclusion below the brittle slip plane. The calculations reveal that the surface deformation pattern is most sensitive to the rheology of the material that lies below the slip plane in a volume whose extent is a few times the fault depth. If this material is viscoelastic, the surface deformation pattern resembles that of an elastic layer lying over a viscoelastic half-space. When the thickness or breath of the viscoelastic material is less than a few times the fault depth, then the surface deformation pattern is altered and geodetic measurements are potentially useful for studying the details of subsurface geometry and structure. Distinguishing among the various models is best accomplished by making geodetic measurements not only near the fault but out to distances equal to several times the fault depth. This is where the model differences are greatest; these differences will be most readily detected shortly after an earthquake when viscoelastic effects are most pronounced

Resistless high resolution optical lithography on silicon

In this letter, we report on the high resolution patterning of a silicon surface without using a resist layer. A hydrogen passivated silicon surface is chemically modified by illumination with ultraviolet light (UV, λ=350.7 nm) in air. Auger electron spectroscopy (AES) revealed that silicon oxide was formed at the illuminated areas. A light interference pattern was made on the silicon surface by two UV laser beams, oxidation occurred only at the maximum intensity, but not at the minimum. In this way oxide lines were fabricated with a width below 200 nm on a 500 nm period. The oxide lines were used as a wet etch mask to etch more than 25 nm into Si(110) without affecting the oxide. The advantage of this technique is that it is a very simple process which allows the high resolution patterning over large areas of silicon without using a resist

Revivals of quantum wave-packets in graphene

We investigate the propagation of wave-packets on graphene in a perpendicular magnetic field and the appearance of collapses and revivals in the time-evolution of an initially localised wave-packet. The wave-packet evolution in graphene differs drastically from the one in an electron gas and shows a rich revival structure similar to the dynamics of highly excited Rydberg states. We present a novel numerical wave-packet propagation scheme in order to solve the effective single-particle Dirac-Hamiltonian of graphene and show how the collapse and revival dynamics is affected by the presence of disorder. Our effective numerical method is of general interest for the solution of the Dirac equation in the presence of potentials and magnetic fields.Comment: 22 pages, 10 figures, 3 movies, to appear in New Journal of Physic

Nanometer lithography on silicon and hydrogenated amorphous silicon with low-energy electrons

We report the local oxidation of hydrogen terminated silicon (Si) surfaces induced with the scanning-tunneling microscope (STM) operating in air and by a beam of free low-energy electrons. With STM, oxide lines were written in Si(100) and Si(110) and transferred into the substrate by wet etching. In case of Si(110) trenches with a width as small as 35 nm and a depth of 300 nm were made. The same process has also successfully been applied to the patterning of hydrogenated amorphous silicon (a-Si:H) thin films. We demonstrate the fabrication of metallic ‘nanowires’ using a-Si:H as resist layer. With regard to the process of oxidation, it is found that the oxide written with STM is apparently not proportional to the electron current, in contrast to results obtained with a beam of free electrons in an oxygen gas-environment. The dose needed to remove the hydrogen was determined as a function of electron energy. This dose is minimal for 100 eV electrons amounting to 4 mC/cm2

The cognitive demands of second order manual control: Applications of the event related brain potential

Three experiments are described in which tracking difficulty is varied in the presence of a covert tone discrimination task. Event related brain potentials (ERPs) elicited by the tones are employed as an index of the resource demands of tracking. The ERP measure reflected the control order variation, and this variable was thereby assumed to compete for perceptual/central processing resources. A fine-grained analysis of the results suggested that the primary demands of second order tracking involve the central processing operations of maintaining a more complex internal model of the dynamic system, rather than the perceptual demands of higher derivative perception. Experiment 3 varied tracking bandwidth in random input tracking, and the ERP was unaffected. Bandwidth was then inferred to compete for response-related processing resources that are independent of the ERP