A general approach for high yield fabrication of CMOS compatible all semiconducting carbon nanotube field effect transistors

We report strategies of achieving both high assembly yield of carbon nanotubes at selected position of the circuit via dielectrophoresis (DEP) and field effect transistor (FET) yield using semiconducting enriched single walled carbon nanotube (s-SWNT) aqueous solution. When the DEP parameters were optimized for the assembly of individual s-SWNT, 97% of the devices show FET behavior with a maximum mobility of 210 cm2/Vs, on-off current ratio ~ 106 and on conductance up to 3 {\mu}S, however with an assembly yield of only 33%. As the DEP parameters were optimized so that 1-5 s-SWNTs are connected per electrode pair, the assembly yield was almost 90% with ~ 90% of these assembled devices demonstrating FET behavior. Further optimization gives an assembly yield of 100% with up to 10 SWNT/site, however with a reduced FET yield of 59%. Improved FET performance including higher current on-off ratio and high switching speed were obtained by integrating a local Al2O3 gate to the device. Our 90% FET with 90% assembly yield is the highest reported so far for carbon nanotube devices. Our study provides a pathway which could become a general approach for the high yield fabrication of CMOS compatible carbon nanotube FETs.Comment: 20 pages, 6 figure

Piezoelectric modulation of nonlinear optical response in BaTiO3 thin film

We study the nonlinear optical response in a strained thin film ferroelectric oxide BaTiO3 using piezoelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (001) as a variable strain substrate and La-doped SrTiO3 as a conductive buffer layer. The rotation-anisotropic second harmonic intensity profile shows hysteretic modulation corresponding to the strain variation from the inverse piezoelectric response of the substrate. An enhancement of 15% is observed at 1.2 kV/cm, while a control sample shows negligible change as a function of piezovoltage. Reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, and high-resolution scanning transmission electron microscopy reveal the epitaxial interface. X-ray diffraction and piezoresponse force microscopy confirm tetragonal distortion and ferroelectricity of the BaTiO3 overlayer. Our results suggest a promising route to enhance the performance of nonlinear optical oxides for the development of future nano-opto-mechanical devices

High Yield Assembly And Electron Transport Investigation Of Semiconducting-Rich Local-Gated Single-Walled Carbon Nanotube Field Effect Transistors

We report the fabrication and electron transport investigation of individual local-gated single-walled carbon nanotube field effect transistors (SWNT-FET) with high yield using a semiconducting-rich carbon nanotube solution. The individual semiconducting nanotubes were assembled at the selected position of the circuit via dielectrophoresis. Detailed electron transport investigations on 70 devices show that 99% display good FET behavior, with an average threshold voltage of 1V, subthreshold swing as low as 140mV/dec, and on/off current ratio as high as 8 × 105. The high yield directed assembly of local-gated SWNT-FET will facilitate large scale fabrication of CMOS (complementary metal-oxide-semiconductor) compatible nanoelectronic devices. © IOP Publishing Ltd

A General Approach For High Yield Fabrication Of Cmos-Compatible All-Semiconducting Carbon Nanotube Field Effect Transistors

This paper analyzes the impact of Internet use on human obesity in the United States. The United States is facing a skyrocketing obesity epidemic among adults and children. The authors hypothesize that the more individuals use the Internet, the more they increase their risks of becoming obese. The explanation is that Internet use may cause sedentarism, which refers to decreased energy expenditure or, simply, physical inactivity. Sedentarism, in turn, may increase obesity. Copyright © Taylor & Francis Group, LLC